Central Semiconductor Corp 2N4399
- Part Number:
- 2N4399
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845338-2N4399
- Description:
- TRANS PNP 60V 30A TO-3
- ECAD Model:
-
- Datasheet:
- 2N4399
Central Semiconductor Corp 2N4399 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4399.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Package / CaseTO-3
- Number of Pins3
- PackagingBulk
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- SubcategoryOther Transistors
- Max Power Dissipation5W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Number of Elements1
- PolarityPNP
- ConfigurationSINGLE
- Power Dissipation5W
- Case ConnectionCOLLECTOR
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current30A
- JEDEC-95 CodeTO-204AA
- Transition Frequency4MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)15
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N4399 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
2N4399 Features
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
2N4399 Applications
There are a lot of Microsemi Corporation
2N4399 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
2N4399 Features
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
2N4399 Applications
There are a lot of Microsemi Corporation
2N4399 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4399 More Descriptions
Transistor PNP Silicon Bvceo=60V IC-30A TO-3 Case For Power Amplifier And Switching ApplicationsNTE Electronics
NTE ELECTRONICS 2N4399 SILICON PNP TRANSISTOR, 60V, 30A, TO-3
SILICON PNP TRANSISTOR, 60V, 30A, TO-3;; SILICON PNP TRANSISTOR, 60V, 30A, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:5W; DC Collector Current:30A; DC Current Gain hFE:40hFE; No. of Pins:3Pins
Silicon Pnp Transistor, 60V, 30A, To-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:30A; Power Dissipation:5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics 2N4399
NTE ELECTRONICS 2N4399 SILICON PNP TRANSISTOR, 60V, 30A, TO-3
SILICON PNP TRANSISTOR, 60V, 30A, TO-3;; SILICON PNP TRANSISTOR, 60V, 30A, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:5W; DC Collector Current:30A; DC Current Gain hFE:40hFE; No. of Pins:3Pins
Silicon Pnp Transistor, 60V, 30A, To-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:30A; Power Dissipation:5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics 2N4399
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