Fairchild/ON Semiconductor 2N3906TF
- Part Number:
- 2N3906TF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463183-2N3906TF
- Description:
- TRANS PNP 40V 0.2A TO-92
- Datasheet:
- 2N3906TF
Fairchild/ON Semiconductor 2N3906TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3906TF.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time7 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-200mA
- Frequency250MHz
- Base Part Number2N3906
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage-40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn On Time-Max (ton)70ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3906TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TF Applications
There are a lot of ON Semiconductor
2N3906TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TF Applications
There are a lot of ON Semiconductor
2N3906TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3906TF More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Transistor General Purpose
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3906 Series 40 V 0.2 A 625 mW PNP General Purpose Amplifier - TO-92-3
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:-200mA; DC Current Gain hFE:100; No. of Pins:3
Bipolar Transistors - BJT PNP Transistor General Purpose
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3906 Series 40 V 0.2 A 625 mW PNP General Purpose Amplifier - TO-92-3
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:-200mA; DC Current Gain hFE:100; No. of Pins:3
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