ON Semiconductor 2N3772G
- Part Number:
- 2N3772G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845394-2N3772G
- Description:
- TRANS NPN 60V 20A TO3
- Datasheet:
- 2N3772G
ON Semiconductor 2N3772G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3772G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight13.607771g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation150W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Frequency200kHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N3772
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200 kHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current20A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A 4V
- Current - Collector Cutoff (Max)10mA
- Vce Saturation (Max) @ Ib, Ic4V @ 4A, 20A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency0.2MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min15
- Height26.67mm
- Length39.37mm
- Width8.509mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3772G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 10A 4V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 4A, 20A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 20A.In the part, the transition frequency is 0.2MHz.A maximum collector current of 20A volts can be achieved.
2N3772G Features
the DC current gain for this device is 15 @ 10A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 4A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 0.2MHz
2N3772G Applications
There are a lot of ON Semiconductor
2N3772G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 10A 4V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 4A, 20A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 20A.In the part, the transition frequency is 0.2MHz.A maximum collector current of 20A volts can be achieved.
2N3772G Features
the DC current gain for this device is 15 @ 10A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 4A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 0.2MHz
2N3772G Applications
There are a lot of ON Semiconductor
2N3772G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3772G More Descriptions
20 A, 60 V NPN Bipolar Power Transistor
2N Series 60 V 20 A High-Power NPN Silicon Power Transistor - TO-204AA
Trans GP BJT NPN 60V 20A 150000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar, Si, NPN, High Power, VCEO 60VDC, IC 20A, PD 150W, TO-204,hFE 5 | ON Semiconductor 2N3772G
ON SEMICONDUCTOR - 2N3772G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 200 kHz, 150 W, 20 A, 60 hFE
BIPOLAR TRANSISTOR, NPN, 60V TO-204
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:20A; Power Dissipation Pd:150W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:60Hferohs Compliant: Yes |Onsemi 2N3772G.
2N Series 60 V 20 A High-Power NPN Silicon Power Transistor - TO-204AA
Trans GP BJT NPN 60V 20A 150000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar, Si, NPN, High Power, VCEO 60VDC, IC 20A, PD 150W, TO-204,hFE 5 | ON Semiconductor 2N3772G
ON SEMICONDUCTOR - 2N3772G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 200 kHz, 150 W, 20 A, 60 hFE
BIPOLAR TRANSISTOR, NPN, 60V TO-204
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:20A; Power Dissipation Pd:150W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:60Hferohs Compliant: Yes |Onsemi 2N3772G.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 October 2023
LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR
Ⅰ. Overview of LM3900NⅡ. Symbol and footprint of LM3900NⅢ. Technical parameters of LM3900NⅣ. What are the features of LM3900N?Ⅴ. Pin configuration of LM3900NⅥ. Circuit and working principle of... -
20 October 2023
TNY268PN Switcher: Symbol, Features, Manufacturer and Applications
Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What... -
20 October 2023
A Comprehensive Introduction to MJE2955T Transistor
Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute... -
23 October 2023
UA741CP Operational Amplifier: Symbol, Equivalent, Dimensions and Applications
Ⅰ. What is UA741CP operational amplifier?Ⅱ. Symbol and footprint of UA741CP operational amplifierⅢ. Technical parameters of UA741CP operational amplifierⅣ. What are the features of UA741CP operational amplifier?Ⅴ. Dimensions...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.