ON Semiconductor 2N3771G
- Part Number:
- 2N3771G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463288-2N3771G
- Description:
- TRANS NPN 40V 30A TO-3
- Datasheet:
- 2N3771G
ON Semiconductor 2N3771G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3771G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation150W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating30A
- Frequency200kHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N3771
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200 kHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current30A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A 4V
- Current - Collector Cutoff (Max)10mA
- Vce Saturation (Max) @ Ib, Ic4V @ 6A, 30A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency0.2MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3771G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 15A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 0.2MHz in the part.When collector current reaches its maximum, it can reach 30A volts.
2N3771G Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 6A, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 0.2MHz
2N3771G Applications
There are a lot of ON Semiconductor
2N3771G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 15A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 0.2MHz in the part.When collector current reaches its maximum, it can reach 30A volts.
2N3771G Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 6A, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 0.2MHz
2N3771G Applications
There are a lot of ON Semiconductor
2N3771G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3771G More Descriptions
30 A, 40 V NPN Bipolar Power Transistor
Trans GP BJT NPN 40V 30A 150000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,High Power,VCEO 40VDC,IC 30A,PD 150W,TO-204,hFE 5 | ON Semiconductor 2N3771G
BIPOLAR Transistor, NPN, 40V TO-204; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V;
TRANSISTOR, BIPOL, NPN, 40V, TO-204-2; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 200kHz; Power Dissipation Pd: 150W; DC Collector Current: 30A; DC Current Gain hFE: 5hFE; Trans
Trans GP BJT NPN 40V 30A 150000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,High Power,VCEO 40VDC,IC 30A,PD 150W,TO-204,hFE 5 | ON Semiconductor 2N3771G
BIPOLAR Transistor, NPN, 40V TO-204; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V;
TRANSISTOR, BIPOL, NPN, 40V, TO-204-2; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 200kHz; Power Dissipation Pd: 150W; DC Collector Current: 30A; DC Current Gain hFE: 5hFE; Trans
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