Central Semiconductor Corp 2N3715
- Part Number:
- 2N3715
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845799-2N3715
- Description:
- TRANS NPN 60V 10A TO-3
- Datasheet:
- 2N3715
Central Semiconductor Corp 2N3715 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3715.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Package / CaseTO-3
- Published2016
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- ConfigurationSINGLE
- Power Dissipation-Max150W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product4MHz
- Collector Emitter Voltage (VCEO)800mV
- Max Collector Current10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage800mV
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)7V
- hFE Min50
- DC Current Gain-Min (hFE)30
- RoHS StatusRoHS Compliant
2N3715 Overview
The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 10A volts.
2N3715 Features
a collector emitter saturation voltage of 800mV
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
2N3715 Applications
There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 10A volts.
2N3715 Features
a collector emitter saturation voltage of 800mV
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
2N3715 Applications
There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3715 More Descriptions
Trans GP BJT NPN 60V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N3715
NPN HIGH POWER SILICON TRANSISTOR TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N3715
NPN HIGH POWER SILICON TRANSISTOR TO-3
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