STMicroelectronics 2N3700

Name: 2N3700
Brand: STMicroelectronics
SKU: 2466937-2N3700
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3700

Manufacturer:: STMicroelectronics

Ventron No:: 2466937-2N3700

Description:: TRANS NPN 80V 1A TO-18

ECAD Model:

Datasheet:: 2N3700

Specifications

STMicroelectronics 2N3700 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N3700.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-18
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Number of Elements
1
Polarity
NPN
Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.

2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-18

2N3700 Applications
There are a lot of Microsemi Corporation
2N3700 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3700 More Descriptions

2N3700: 1 A 80 V Through Hole Low Power NPN Silicon Transistor - TO-18-3
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18 Bag
GENERAL PURPOSE AMPLIFIERS | TRANS NPN 80V 1A TO18

Certification