Central Semiconductor Corp 2N3501
- Part Number:
- 2N3501
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2464090-2N3501
- Description:
- TRANS NPN 150V 0.3A TO-39
- ECAD Model:
-
- Datasheet:
- 2N3501
Central Semiconductor Corp 2N3501 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3501.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39 (TO-205AD)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation1W
- Number of Elements1
- PolarityNPN
- Power Dissipation1W
- Power - Max1W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage150V
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)300mA
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N3501 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.
2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N3501 Applications
There are a lot of Microsemi Corporation
2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-39 (TO-205AD).A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 300mA volts at its maximum.
2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N3501 Applications
There are a lot of Microsemi Corporation
2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3501 More Descriptions
Transistor GP BJT NPN 150V 0.3A 3-Pin TO-39Avnet Japan
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:150MHz; Power Dissipation Pd:1W; DC
Bipolar Transistor, Npn, 150V To-39; Transistor Polarity:Npn; Collector Emitter Voltage Max:150V; Continuous Collector Current:300Ma; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Multicomp Pro 2N3501
TRANSISTOR,NPN,0.3A,150V,TO39; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 300mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 150MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:150MHz; Power Dissipation Pd:1W; DC
Bipolar Transistor, Npn, 150V To-39; Transistor Polarity:Npn; Collector Emitter Voltage Max:150V; Continuous Collector Current:300Ma; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Multicomp Pro 2N3501
TRANSISTOR,NPN,0.3A,150V,TO39; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 300mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 150MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
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