Microsemi Corporation 2N3499
- Part Number:
- 2N3499
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585400-2N3499
- Description:
- TRANS NPN 100V 0.5A TO-39
- ECAD Model:
-
- Datasheet:
- 2N3499
Microsemi Corporation 2N3499 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3499.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39 (TO-205AD)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation1W
- Power - Max1W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)500mA
- Collector Base Voltage (VCBO)100V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N3499 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Product comes in TO-39 (TO-205AD) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 500mA volts.
2N3499 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of TO-39 (TO-205AD)
2N3499 Applications
There are a lot of Microsemi Corporation
2N3499 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Product comes in TO-39 (TO-205AD) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 500mA volts.
2N3499 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of TO-39 (TO-205AD)
2N3499 Applications
There are a lot of Microsemi Corporation
2N3499 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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