Microsemi Corporation 2N3498

Name: 2N3498
Brand: Microsemi Corporation
SKU: 2466251-2N3498
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3498

Manufacturer:: Microsemi Corporation

Ventron No:: 2466251-2N3498

Description:: TRANS NPN 100V 0.5A TO-39

ECAD Model:

Datasheet:: 2N3498

Specifications

Microsemi Corporation 2N3498 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3498.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-39 (TO-205AD)
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Number of Elements
1
Polarity
NPN
Power Dissipation
1W
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
500mA
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N3498 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2N3498 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)

2N3498 Applications
There are a lot of Microsemi Corporation
2N3498 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3498 More Descriptions

Trans GP BJT NPN 100V 0.5A 3-Pin TO-39
Small-Signal BJT _ TO-39

Certification