Microsemi Corporation 2N3498
- Part Number:
- 2N3498
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466251-2N3498
- Description:
- TRANS NPN 100V 0.5A TO-39
- Datasheet:
- 2N3498
Microsemi Corporation 2N3498 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3498.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39 (TO-205AD)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation1W
- Number of Elements1
- PolarityNPN
- Power Dissipation1W
- Power - Max1W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)500mA
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N3498 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2N3498 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N3498 Applications
There are a lot of Microsemi Corporation
2N3498 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2N3498 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N3498 Applications
There are a lot of Microsemi Corporation
2N3498 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3498 More Descriptions
Trans GP BJT NPN 100V 0.5A 3-Pin TO-39
Small-Signal BJT _ TO-39
Small-Signal BJT _ TO-39
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