Microsemi Corporation 2N3440L
- Part Number:
- 2N3440L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2846333-2N3440L
- Description:
- TRANS NPN 250V 1A TO-5
- Datasheet:
- 2N3440L
Microsemi Corporation 2N3440L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3440L.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2005
- JESD-609 Codee0
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA 10V
- Current - Collector Cutoff (Max)2μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage250V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)7V
- RoHS StatusNon-RoHS Compliant
2N3440L Overview
DC current gain in this device equals 40 @ 20mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3440L Applications
There are a lot of Microsemi Corporation
2N3440L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 20mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3440L Applications
There are a lot of Microsemi Corporation
2N3440L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3440L More Descriptions
Non-Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW 1
Trans GP BJT NPN 250V 1A 3-Pin TO-5
Bipolar Transistors - BJT Power BJT
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3440L
Trans GP BJT NPN 250V 1A 3-Pin TO-5
Bipolar Transistors - BJT Power BJT
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3440L
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