2N3440L

Microsemi Corporation 2N3440L

Part Number:
2N3440L
Manufacturer:
Microsemi Corporation
Ventron No:
2846333-2N3440L
Description:
TRANS NPN 250V 1A TO-5
ECAD Model:
Datasheet:
2N3440L

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Specifications
Microsemi Corporation 2N3440L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3440L.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 2 weeks ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Published
    2005
  • JESD-609 Code
    e0
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 20mA 10V
  • Current - Collector Cutoff (Max)
    2μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 4mA, 50mA
  • Collector Emitter Breakdown Voltage
    250V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    7V
  • RoHS Status
    Non-RoHS Compliant
Description
2N3440L Overview
DC current gain in this device equals 40 @ 20mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.

2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V


2N3440L Applications
There are a lot of Microsemi Corporation
2N3440L applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N3440L More Descriptions
Non-Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW 1
Trans GP BJT NPN 250V 1A 3-Pin TO-5
Bipolar Transistors - BJT Power BJT
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3440L
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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