2N3439L

Microsemi Corporation 2N3439L

Part Number:
2N3439L
Manufacturer:
Microsemi Corporation
Ventron No:
3069140-2N3439L
Description:
TRANS NPN 350V 1A TO-5
ECAD Model:
Datasheet:
2N3439L

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Specifications
Microsemi Corporation 2N3439L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3439L.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Published
    2007
  • JESD-609 Code
    e0
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 20mA 10V
  • Current - Collector Cutoff (Max)
    2μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 4mA, 50mA
  • Collector Emitter Breakdown Voltage
    350V
  • Collector Base Voltage (VCBO)
    450V
  • Emitter Base Voltage (VEBO)
    7V
  • RoHS Status
    Non-RoHS Compliant
Description
2N3439L Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.

2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V


2N3439L Applications
There are a lot of Microsemi Corporation
2N3439L applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N3439L More Descriptions
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-5 Bag
Non-Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3439L
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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