Microsemi Corporation 2N3439L
- Part Number:
- 2N3439L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069140-2N3439L
- Description:
- TRANS NPN 350V 1A TO-5
- Datasheet:
- 2N3439L
Microsemi Corporation 2N3439L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3439L.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA 10V
- Current - Collector Cutoff (Max)2μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Collector Base Voltage (VCBO)450V
- Emitter Base Voltage (VEBO)7V
- RoHS StatusNon-RoHS Compliant
2N3439L Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3439L Applications
There are a lot of Microsemi Corporation
2N3439L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 1A volts is possible.
2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3439L Applications
There are a lot of Microsemi Corporation
2N3439L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3439L More Descriptions
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-5 Bag
Non-Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3439L
Non-Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N3439L
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