ON Semiconductor 2N3055G
- Part Number:
- 2N3055G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462826-2N3055G
- Description:
- TRANS NPN 60V 15A TO3
- Datasheet:
- 2N3055G
ON Semiconductor 2N3055G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3055G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation115W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency2.5MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N3055
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation115W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2.5MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency2.5MHz
- Collector Emitter Saturation Voltage3V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- Max Junction Temperature (Tj)200°C
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. The output or driver stages in devices like switching regulators, converters, and power amplifiers are where complementary power transistors are used for general-purpose power amplification and switching. A semiconductor device frequently utilized for amplification is the bipolar transistor. Analog or digital signals can be amplified using the gadget. Additionally, it can switch DC or work as an oscillator. A bipolar transistor physically increases current, but it can also be coupled in circuits intended to increase voltage or power.
Features
Excellent Safe Operating Area
Pb?Free Packages are Available*
DC Current Gain ? hFE = 20?70 @ IC = 4 Adc
Collector?Emitter Saturation Voltage ? VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Designed to control high current – voltage rating
Applications
Industrial
Switch-mode power supplies (SMPS) Relays
Converters
Power amplifiers
Controlling
Generating electrical signals
The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. The output or driver stages in devices like switching regulators, converters, and power amplifiers are where complementary power transistors are used for general-purpose power amplification and switching. A semiconductor device frequently utilized for amplification is the bipolar transistor. Analog or digital signals can be amplified using the gadget. Additionally, it can switch DC or work as an oscillator. A bipolar transistor physically increases current, but it can also be coupled in circuits intended to increase voltage or power.
Features
Excellent Safe Operating Area
Pb?Free Packages are Available*
DC Current Gain ? hFE = 20?70 @ IC = 4 Adc
Collector?Emitter Saturation Voltage ? VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Designed to control high current – voltage rating
Applications
Industrial
Switch-mode power supplies (SMPS) Relays
Converters
Power amplifiers
Controlling
Generating electrical signals
2N3055G More Descriptions
15 A, 60 V NPN Bipolar Power Transistor
2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3
On Semiconductor 2N3055G NPN Bipolar Transistor 15A 60V TO204AA
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 15A, PD 115W, TO-204AA (TO-3) | ON Semiconductor 2N3055G
TRANSISTOR, NPN, 60V, 15A, TO3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:115W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi 2N3055G.
2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3
On Semiconductor 2N3055G NPN Bipolar Transistor 15A 60V TO204AA
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 15A, PD 115W, TO-204AA (TO-3) | ON Semiconductor 2N3055G
TRANSISTOR, NPN, 60V, 15A, TO3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:115W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi 2N3055G.
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