2N3055G

ON Semiconductor 2N3055G

Part Number:
2N3055G
Manufacturer:
ON Semiconductor
Ventron No:
2462826-2N3055G
Description:
TRANS NPN 60V 15A TO3
ECAD Model:
Datasheet:
2N3055G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor 2N3055G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3055G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    115W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    15A
  • Frequency
    2.5MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N3055
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    115W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    2.5MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    700μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    2.5MHz
  • Collector Emitter Saturation Voltage
    3V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    20
  • Max Junction Temperature (Tj)
    200°C
  • Height
    8.51mm
  • Length
    39.37mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. The output or driver stages in devices like switching regulators, converters, and power amplifiers are where complementary power transistors are used for general-purpose power amplification and switching. A semiconductor device frequently utilized for amplification is the bipolar transistor. Analog or digital signals can be amplified using the gadget. Additionally, it can switch DC or work as an oscillator. A bipolar transistor physically increases current, but it can also be coupled in circuits intended to increase voltage or power.

Features
Excellent Safe Operating Area
Pb?Free Packages are Available*
DC Current Gain ? hFE = 20?70 @ IC = 4 Adc
Collector?Emitter Saturation Voltage ? VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Designed to control high current – voltage rating

Applications
Industrial
Switch-mode power supplies (SMPS) Relays
Converters
Power amplifiers
Controlling
Generating electrical signals
2N3055G More Descriptions
15 A, 60 V NPN Bipolar Power Transistor
2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3
On Semiconductor 2N3055G NPN Bipolar Transistor 15A 60V TO204AA
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 15A, PD 115W, TO-204AA (TO-3) | ON Semiconductor 2N3055G
TRANSISTOR, NPN, 60V, 15A, TO3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:115W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi 2N3055G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.