Microsemi Corporation 2N3019

Name: 2N3019
Brand: Microsemi Corporation
SKU: 2463338-2N3019
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3019

Manufacturer:: Microsemi Corporation

Ventron No:: 2463338-2N3019

Description:: TRANS NPN 80V 1A TO-5

ECAD Model:

Datasheet:: 2N3019 2N3019,2N3020 Datasheet

Specifications

Microsemi Corporation 2N3019 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3019.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-5
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
800mW
Number of Elements
1
Polarity
NPN
Power Dissipation
800mW
Power - Max
800mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N3019 Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-5.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.The maximum collector current is 1A volts.

2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-5

2N3019 Applications
There are a lot of Microsemi Corporation
2N3019 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3019 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
2N3019 Series 80 V 1 A Through Hole NPN Silicon Transistor - TO-39
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Bag

Certification