Microsemi Corporation 2N2905A

Name: 2N2905A
Brand: Microsemi Corporation
SKU: 3069093-2N2905A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N2905A

Manufacturer:: Microsemi Corporation

Ventron No:: 3069093-2N2905A

Description:: TRANS PNP 60V 0.6A

ECAD Model:

Datasheet:: 2N/FTSO/PN NPN Type (10p) 2N290(5,7)A

Specifications

Microsemi Corporation 2N2905A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2905A.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Manufacturer Package Identifier
TO39-P008B
Operating Temperature
175°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
600mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Current Rating
-600mA
Frequency
200MHz
Base Part Number
2N29
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-60V
Max Collector Current
-600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-1.6V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
50
Max Junction Temperature (Tj)
175°C
Turn On Time-Max (ton)
45ns
Collector-Base Capacitance-Max
8pF
Diameter
9.4mm
Height
6.6mm
Length
9.4mm
Width
9.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N2905A Description
STM's 2N2905A is a through hole silicon planar PNP transistor packaged in a TO-19 metal container. Because of its fast switching, short turn-off, and low saturation voltage, this transistor is ideal for switching and amplification.

2N2905A Features
Collector emitter voltage (Vce) of -60V
Continuous collector current (Ic) of -600mA
Power dissipation of 600mW
Operating junction temperature range from -65??C to 200??C
Collector emitter saturation voltage of -400mV at Ic=150mA

2N2905A Applications
Signal Processing
Power Management
Portable Devices
Consumer Electronics
Industrial

2N2905A More Descriptions

Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39
2N Series 60 V 600 mA PNP Through Hole Switching Silicon Transistor - TO-39
10Ã×A 60V 800mW 600mA 100@1mA10V PNP 1.6V@500mA50mA -65¡Í~ 200¡Í@(Tj) TO-39-3 Bipolar Transistors - BJT ROHS

Certification