Microsemi Corporation 2N2904AL
- Part Number:
- 2N2904AL
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3553945-2N2904AL
- Description:
- TRANS PNP 60V 0.6A TO5
- Datasheet:
- 2N2904AL
Microsemi Corporation 2N2904AL technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2904AL.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.21.00.95
- Max Power Dissipation600mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Number of Elements1
- ConfigurationSINGLE
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Base Voltage (VCBO)60V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N2904AL Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maximum collector currents can be below 600mA volts.
2N2904AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
2N2904AL Applications
There are a lot of Microsemi Corporation
2N2904AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maximum collector currents can be below 600mA volts.
2N2904AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
2N2904AL Applications
There are a lot of Microsemi Corporation
2N2904AL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2904AL More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5
Trans GP BJT PNP 60V 0.6A 3-Pin TO-5
Small-Signal Bjt To-5 Rohs Compliant: Yes |Microchip 2N2904AL
Trans GP BJT PNP 60V 0.6A 3-Pin TO-5
Small-Signal Bjt To-5 Rohs Compliant: Yes |Microchip 2N2904AL
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