Central Semiconductor Corp 2N2270
- Part Number:
- 2N2270
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845874-2N2270
- Description:
- TRANS NPN 45V 1A TO-39
- Datasheet:
- 2N2270
Central Semiconductor Corp 2N2270 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N2270.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-39
- Transistor Element MaterialSILICON
- Published2012
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Operating Temperature (Max)200°C
- Number of Elements1
- PolarityNPN
- Power Dissipation-Max1W
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Collector Emitter Voltage (VCEO)900mV
- Max Collector Current1A
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage900mV
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min50
- DC Current Gain-Min (hFE)50
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N2270 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.
2N2270 Features
a collector emitter saturation voltage of 900mV
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N2270 Applications
There are a lot of Central Semiconductor
2N2270 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.
2N2270 Features
a collector emitter saturation voltage of 900mV
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N2270 Applications
There are a lot of Central Semiconductor
2N2270 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2270 More Descriptions
Transistor NPN 2N2270 MOTOROLA Ampere=1 V=45 TO39
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