Central Semiconductor Corp 2N2222A
- Part Number:
- 2N2222A
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2462841-2N2222A
- Description:
- TRANS NPN 40V 0.8A TO-18
Central Semiconductor Corp 2N2222A technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N2222A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time4 Weeks
- Package / CaseTO-18
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Number of Elements1
- Power Dissipation500mW
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- Collector Emitter Breakdown Voltage50V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Max Junction Temperature (Tj)200°C
- Height5.33mm
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
2N2222A Overview
Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 800mA volts.
2N2222A Features
the emitter base voltage is kept at 6V
2N2222A Applications
There are a lot of MICROSS/On Semiconductor
2N2222A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 800mA volts.
2N2222A Features
the emitter base voltage is kept at 6V
2N2222A Applications
There are a lot of MICROSS/On Semiconductor
2N2222A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2222A More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA
2N2222A 50 V 800 mA NPN Silicon Switching Transistor - TO-18 (TO-206AA)
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag
2N2222A 50 V 800 mA NPN Silicon Switching Transistor - TO-18 (TO-206AA)
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag
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