2N1711

STMicroelectronics 2N1711

Part Number:
2N1711
Manufacturer:
STMicroelectronics
Ventron No:
2465845-2N1711
Description:
TRANS NPN 50V 0.5A TO-39
ECAD Model:
Datasheet:
2N1711 2N1711 Datasheet

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Specifications
STMicroelectronics 2N1711 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N1711.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    75V
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Current Rating
    500mA
  • Frequency
    100MHz
  • Base Part Number
    2N17
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    800mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 100mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 15mA, 150mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    40
  • Height
    6.6mm
  • Length
    9.4mm
  • Width
    9.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description

2N1711 Description

The 2N1711 is a NPN silicon Transistor for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range. The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
2N1711 Features

● 75V Collector-Base Voltage
● 7V Emitter-Base Voltage
● 0.5A Continuous Collector Current
● Lead Free
● ROHS3 Compliant
2N1711 Applications

● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Audio
● Signal Processing
2N1711 More Descriptions
Transistor GP BJT NPN 50V 500mA 3-Pin TO-39Avnet Japan
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:70MHz; Power Dissipation Pd:3W; DC Current:500mA;
Bipolar Transistor, Npn, 50V, To-39; Transistor Polarity:Npn; Collector Emitter Voltage Max:50V; Continuous Collector Current:500Ma; Power Dissipation:800Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes |Multicomp Pro 2N1711
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 70MHz; Power Dissipation Pd: 3W; DC Collector Current: 500mA; DC Current Gain hFE: 35hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 500mA; Hfe Min: 40; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C; Termination Type: Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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