Part Number: NSS1C200LT1G vs NSS12100M3T5G

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Part Number: NSS1C200LT1G NSS12100M3T5G
Manufacturer: ON Semiconductor ON Semiconductor
Description: TRANS PNP 100V 2A SOT-23 TRANS PNP 12V 1A SOT-723
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 3 days ago) ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks 4 Weeks
Contact Plating Tin Tin
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-723
Surface Mount YES YES
Number of Pins 3 3
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 1997 2005
JESD-609 Code e3 e3
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
ECCN Code EAR99 EAR99
Subcategory Other Transistors Other Transistors
Max Power Dissipation 710mW 625mW
Terminal Position DUAL DUAL
Terminal Form GULL WING FLAT
Frequency 120MHz -
Base Part Number NSS1C200 NSS12100
Pin Count 3 3
Number of Elements 1 1
Element Configuration Single Single
Power Dissipation 710mW 625mW
Power - Max 490mW -
Transistor Application SWITCHING SWITCHING
Halogen Free Halogen Free Halogen Free
Gain Bandwidth Product 120MHz -
Polarity/Channel Type PNP PNP
Transistor Type PNP PNP
Collector Emitter Voltage (VCEO) 100V 12V
Max Collector Current 2A 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A 410mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V 12V
Transition Frequency 120MHz -
Collector Emitter Saturation Voltage -40mV -35mV
Max Breakdown Voltage 100V 12V
Collector Base Voltage (VCBO) 140V 12V
Emitter Base Voltage (VEBO) 7V 5V
Height 1.01mm 550μm
Length 3.04mm 1.25mm
Width 1.4mm 850μm
REACH SVHC No SVHC No SVHC
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free Lead Free
hFE Min - 80
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