Part Number: PMBFJ110,215 vs PMBFJ308,215
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
|
|---|---|---|
| Part Number: | PMBFJ110,215 | PMBFJ308,215 |
| Manufacturer: | NXP USA Inc. | NXP USA Inc. |
| Description: | JFET N-CH 25V 250MW SOT23 | PMBFJ308,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Ventron |
| Quantity Available: | Available | Available |
| Datasheets: | PMBFJ108.109,110 | - |
| Factory Lead Time | 8 Weeks | 8 Weeks |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES | YES |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | 150°C TJ | 150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Published | 2001 | 2001 |
| JESD-609 Code | e3 | e3 |
| Part Status | Obsolete | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | 3 |
| ECCN Code | EAR99 | - |
| Terminal Finish | Tin (Sn) | Tin (Sn) |
| HTS Code | 8541.21.00.95 | 8541.21.00.75 |
| Subcategory | Other Transistors | Other Transistors |
| Terminal Position | DUAL | DUAL |
| Terminal Form | GULL WING | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 | NOT SPECIFIED |
| Base Part Number | MBFJ110 | - |
| Pin Count | 3 | 3 |
| JESD-30 Code | R-PDSO-G3 | R-PDSO-G3 |
| Qualification Status | Not Qualified | Not Qualified |
| Number of Elements | 1 | 1 |
| Configuration | SINGLE | SINGLE |
| Operating Mode | DEPLETION MODE | DEPLETION MODE |
| Power - Max | 250mW | 250mW |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V VGS | 5pF @ 10V |
| JEDEC-95 Code | TO-236AB | TO-236AB |
| Drain-source On Resistance-Max | 18Ohm | - |
| DS Breakdown Voltage-Min | 25V | 25V |
| FET Technology | JUNCTION | JUNCTION |
| Power Dissipation-Max (Abs) | 0.25W | 0.25W |
| Feedback Cap-Max (Crss) | 15 pF | 2.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10mA @ 15V | 12mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id | 4V @ 1μA | 1V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 25V | 25V |
| Resistance - RDS(On) | 18Ohm | 50Ohm |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Additional Feature | - | LOW NOISE |
| Highest Frequency Band | - | VERY HIGH FREQUENCY B |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
PMBFJ309 | NXP | Compare | |
|
PMBFJ310 | NXP | Compare | |
|
PMBFJ308 | NXP | Compare | |
|
PMBFJ310,215 | NXP USA Inc. | JFET N-CH 25V 250MW SOT23 | Compare |
|
PMBFJ309,215 | NXP USA Inc. | JFET N-CH 25V 250MW SOT23 | Compare |
