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PMBFJ110,215

NXP USA Inc. PMBFJ110,215

Part Number:
PMBFJ110,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495720-PMBFJ110,215
Description:
JFET N-CH 25V 250MW SOT23
ECAD Model:
Datasheet:
PMBFJ108.109,110

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Specifications
NXP USA Inc. PMBFJ110,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ110,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ110
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    30pF @ 10V VGS
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    18Ohm
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    15 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    10mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    4V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    18Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ110,215 Description
PMBFJ110,215 is an N-channel JFET transistor from the manufacturer NXP USA Inc with the voltage of 25V. The operating temperature of the PMBFJ110,215 is 150°C TJ and its maximum power dissipation is 0.25W and it is available in Tape & Reel (TR) packaging way. The Drain-source On Resistance-Max of PMBFJ110,215 is 18Ohm.

PMBFJ110,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (8 for PMBFJ108)

PMBFJ110,215 Applications
Analog switches
Choppers and commutators
Audio amplifiers
PMBFJ110,215 More Descriptions
JFET Transistor, N Channel, -25 V, 10 mA, -500 mV, SOT-23
PMBFJ110 Series N-Channel 25 V Surface Mount Junction FET - SOT-23
RF JFET, N CHANNEL, 25V, 10MA, 3-SOT-23
Trans JFET N-CH 25V 3-Pin TO-236AB T/R
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
N-Channel Fet Rohs Compliant: Yes
RF SMALL SIGNAL TRANSISTOR MOSFET
Product Comparison
The three parts on the right have similar specifications to PMBFJ110,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Additional Feature
    Highest Frequency Band
    View Compare
  • PMBFJ110,215
    PMBFJ110,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ110
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    30pF @ 10V VGS
    TO-236AB
    18Ohm
    25V
    JUNCTION
    0.25W
    15 pF
    10mA @ 15V
    4V @ 1μA
    25V
    18Ohm
    ROHS3 Compliant
    -
    -
    -
  • PMBFJ308,215
    PMBFJ308,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    -
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    -
    25V
    JUNCTION
    0.25W
    2.5 pF
    12mA @ 10V
    1V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    LOW NOISE
    VERY HIGH FREQUENCY B
    PMBFJ110,215 vs PMBFJ308,215
  • PMBFJ113,215
    PMBFJ113,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ113
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    100Ohm
    40V
    JUNCTION
    0.3W
    -
    2mA @ 15V
    3V @ 1μA
    40V
    100Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ110,215 vs PMBFJ113,215
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ176
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    -
    250Ohm
    30V
    JUNCTION
    0.3W
    -
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ110,215 vs PMBFJ176,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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