1N3768

GeneSiC Semiconductor 1N3768

Part Number:
1N3768
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2431105-1N3768
Description:
DIODE GEN PURP 1KV 35A DO5
ECAD Model:
Datasheet:
1N3768

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Specifications
GeneSiC Semiconductor 1N3768 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3768.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AB, DO-5, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    1N3768
  • JESD-30 Code
    O-MUPM-D1
  • Operating Temperature (Max)
    190°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 35A
  • Case Connection
    CATHODE
  • Forward Current
    35A
  • Operating Temperature - Junction
    -65°C~190°C
  • Max Surge Current
    475A
  • Application
    GENERAL PURPOSE
  • Voltage - DC Reverse (Vr) (Max)
    1000V
  • Max Reverse Voltage (DC)
    1kV
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1kV
  • Reverse Voltage
    1kV
  • RoHS Status
    RoHS Compliant
Description
1N3768 Overview
An acceptable reverse voltage would be 1kV.As a result, this device has a rectified current of 35A volts on average.Phase diode rectifier is permissible for forward current to reach 35A.There is no maximum value for 475A surge current.Based on the data charts in the datasheets, the peak reverse is 10μA.

1N3768 Features
an average rectified current of 35A volts
the peak reverse is 10μA


1N3768 Applications
There are a lot of GeneSiC Semiconductor
1N3768 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N3768 More Descriptions
1000V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Standard Configuration)
DIODE GEN PURP REV 600V 35A DO5
Standard Recovery - 1000 V - 35 A
Standard Recovery, 1000V, 35A, Do-5; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:35A; Forward Voltage Max:1.2V; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Forward Surge Current:475A Rohs Compliant: Yes |Genesic Semiconductor 1N3768
Product Comparison
The three parts on the right have similar specifications to 1N3768.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Voltage - DC Reverse (Vr) (Max)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Reverse Voltage
    RoHS Status
    Natural Thermal Resistance
    Number of Pins
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Element Configuration
    Forward Voltage
    Peak Non-Repetitive Surge Current
    Max Forward Surge Current (Ifsm)
    Radiation Hardening
    Height
    Length
    Width
    View Compare
  • 1N3768
    1N3768
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    NOT SPECIFIED
    NOT SPECIFIED
    1N3768
    O-MUPM-D1
    190°C
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    1.2V @ 35A
    CATHODE
    35A
    -65°C~190°C
    475A
    GENERAL PURPOSE
    1000V
    1kV
    35A
    1
    10μA
    1kV
    1kV
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N3765R
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    -
    -
    1N3765R
    O-MUPM-D1
    190°C
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10μA @ 50V
    1.2V @ 35A
    ANODE
    35A
    -65°C~190°C
    475A
    GENERAL PURPOSE
    -
    700V
    35A
    1
    10μA
    700V
    700V
    RoHS Compliant
    0.25 °C/W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N3768R
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2012
    -
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    -
    -
    1N3768
    O-MUPM-D1
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    2mA @ 1000V
    1.8V @ 110A
    -
    35A
    -65°C~190°C
    400A
    POWER
    1000V
    1kV
    35A
    1
    2mA
    1kV
    1kV
    ROHS3 Compliant
    0.25 °C/W
    2
    e3
    EAR99
    Tin (Sn) - with Nickel (Ni) barrier
    190°C
    -65°C
    LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    Single
    1.8V
    400A
    400A
    No
    -
    -
    -
  • VS-1N3766R
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2011
    -
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    -
    -
    1N3766
    O-MUPM-D1
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    4mA @ 800V
    1.8V @ 110A
    -
    35A
    -65°C~190°C
    400A
    POWER
    -
    800V
    35A
    1
    4mA
    800V
    800V
    ROHS3 Compliant
    0.25 °C/W
    2
    e3
    EAR99
    Tin (Sn) - with Nickel (Ni) barrier
    190°C
    -65°C
    LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    Single
    -
    400A
    400A
    No
    22.9mm
    20.02mm
    17.35mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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