GeneSiC Semiconductor 1N3767

Name: 1N3767
Brand: GeneSiC Semiconductor
SKU: 2431109-1N3767
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N3767

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2431109-1N3767

Description:: DIODE GEN PURP 900V 35A DO5

ECAD Model:

Datasheet:: 1N3767

Specifications

GeneSiC Semiconductor 1N3767 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3767.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Base Part Number
1N3767
JESD-30 Code
O-MUPM-D1
Operating Temperature (Max)
190°C
Number of Elements
1
Configuration
SINGLE
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 35A
Case Connection
CATHODE
Forward Current
35A
Operating Temperature - Junction
-65°C~190°C
Max Surge Current
475A
Application
GENERAL PURPOSE
Max Reverse Voltage (DC)
900V
Average Rectified Current
35A
Number of Phases
1
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
900V
Reverse Voltage
900V
Natural Thermal Resistance
0.25 °C/W
RoHS Status
RoHS Compliant

Description

1N3767 Overview
A reverse voltage of 900V is reasonable.This device has an average rectified current of 35A volts.Forward current is allowed to reach a value of zero.An object's thermal resistance is a measure of its ability to resist a heat flow, and its natural thermal resistance is 0.25 °C/W °C.Surge currents can be used up to 475A.Datasheets indicate that the peak reverse is 10μA.

1N3767 Features
an average rectified current of 35A volts
the peak reverse is 10μA

1N3767 Applications
There are a lot of GeneSiC Semiconductor
1N3767 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N3767 More Descriptions

900V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Standard Configuration)
DIODE GEN PURP REV 800V 35A DO5
RECTIFIER, STANDARD, SINGLE, 1.4KV, 165A, DO-205AA; Diode Module Configuration:Single; Forward Current If(AV):35A; Forward Voltage VF Max:1.2V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:900V

Product Comparison

The three parts on the right have similar specifications to 1N3767.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Position

Terminal Form

Base Part Number

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

Natural Thermal Resistance

RoHS Status

JESD-609 Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Number of Pins

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

Radiation Hardening

View Compare
1N3767

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3767

O-MUPM-D1

190°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.2V @ 35A

CATHODE

35A

-65°C~190°C

475A

GENERAL PURPOSE

900V

35A

1

10μA

900V

900V

0.25 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N3766

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3766

O-MUPM-D1

190°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.2V @ 35A

CATHODE

35A

-65°C~190°C

475A

GENERAL PURPOSE

800V

35A

1

10μA

800V

800V

0.25 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N3767 vs 1N3766
VS-1N3765

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2012

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3765

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

5mA @ 700V

1.8V @ 110A

CATHODE

35A

-65°C~190°C

400A

POWER

700V

35A

1

5mA

-

700V

0.25 °C/W

ROHS3 Compliant

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

NOT SPECIFIED

unknown

NOT SPECIFIED

Single

-

-

-

-

-

-

-

1N3767 vs VS-1N3765
VS-1N3766R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2011

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3766

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

4mA @ 800V

1.8V @ 110A

-

35A

-65°C~190°C

400A

POWER

800V

35A

1

4mA

800V

800V

0.25 °C/W

ROHS3 Compliant

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

-

-

-

Single

2

400A

400A

22.9mm

20.02mm

17.35mm

No

1N3767 vs VS-1N3766R