GeneSiC Semiconductor 1N3767R
- Part Number:
- 1N3767R
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2431150-1N3767R
- Description:
- DIODE GEN PURP REV 900V 35A DO5
- Datasheet:
- 1N3767R
GeneSiC Semiconductor 1N3767R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3767R.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time6 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AB, DO-5, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- Base Part Number1N3767R
- JESD-30 CodeO-MUPM-D1
- Operating Temperature (Max)190°C
- Number of Elements1
- ConfigurationSINGLE
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard, Reverse Polarity
- Current - Reverse Leakage @ Vr10μA @ 50V
- Voltage - Forward (Vf) (Max) @ If1.2V @ 35A
- Case ConnectionANODE
- Forward Current35A
- Operating Temperature - Junction-65°C~190°C
- Max Surge Current475A
- ApplicationGENERAL PURPOSE
- Max Reverse Voltage (DC)900V
- Average Rectified Current35A
- Number of Phases1
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)900V
- Reverse Voltage900V
- Natural Thermal Resistance0.25 °C/W
- RoHS StatusRoHS Compliant
1N3767R Overview
There is no reason to reverse the voltage at 900V.Devices like this have an average rectified current of 35A volts.There is no limit to the forward current value.Objects or materials' thermal resistance values are based on how much heat they resist when exposed to a given temperature difference, and their natural thermal resistance is 0.25 °C/W.Surge current can reach maximum value 475A.On the data sheets, the peak reverse is indicated by the data chart as 10μA.
1N3767R Features
an average rectified current of 35A volts
the peak reverse is 10μA
1N3767R Applications
There are a lot of GeneSiC Semiconductor
1N3767R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
There is no reason to reverse the voltage at 900V.Devices like this have an average rectified current of 35A volts.There is no limit to the forward current value.Objects or materials' thermal resistance values are based on how much heat they resist when exposed to a given temperature difference, and their natural thermal resistance is 0.25 °C/W.Surge current can reach maximum value 475A.On the data sheets, the peak reverse is indicated by the data chart as 10μA.
1N3767R Features
an average rectified current of 35A volts
the peak reverse is 10μA
1N3767R Applications
There are a lot of GeneSiC Semiconductor
1N3767R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N3767R More Descriptions
900V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 900V 35A DO5
Rectifier, Standard, Single, 1.6Kv, 165A, Do-205Aa; Diode Module Configuration:single; Forward Current If(Av):35A; Forward Voltage Vf Max:1.2V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:900V
DIODE GEN PURP REV 900V 35A DO5
Rectifier, Standard, Single, 1.6Kv, 165A, Do-205Aa; Diode Module Configuration:single; Forward Current If(Av):35A; Forward Voltage Vf Max:1.2V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:900V
The three parts on the right have similar specifications to 1N3767R.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal PositionTerminal FormBase Part NumberJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Reverse VoltageNatural Thermal ResistanceRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Voltage - DC Reverse (Vr) (Max)View Compare
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1N3767RPRODUCTION (Last Updated: 5 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2010yesActive1 (Unlimited)1UPPERSOLDER LUG1N3767RO-MUPM-D1190°C1SINGLEStandard Recovery >500ns, > 200mA (Io)Standard, Reverse Polarity10μA @ 50V1.2V @ 35AANODE35A-65°C~190°C475AGENERAL PURPOSE900V35A110μA900V900V0.25 °C/WRoHS Compliant----
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2010yesActive1 (Unlimited)1UPPERSOLDER LUG1N3765RO-MUPM-D1190°C1SINGLEStandard Recovery >500ns, > 200mA (Io)Standard, Reverse Polarity10μA @ 50V1.2V @ 35AANODE35A-65°C~190°C475AGENERAL PURPOSE700V35A110μA700V700V0.25 °C/WRoHS Compliant---
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2010yesActive1 (Unlimited)1UPPERSOLDER LUG1N3767O-MUPM-D1190°C1SINGLEStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 50V1.2V @ 35ACATHODE35A-65°C~190°C475AGENERAL PURPOSE900V35A110μA900V900V0.25 °C/WRoHS Compliant---
-
PRODUCTION (Last Updated: 6 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2010yesActive1 (Unlimited)1UPPERSOLDER LUG1N3768O-MUPM-D1190°C1SINGLEStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 50V1.2V @ 35ACATHODE35A-65°C~190°C475AGENERAL PURPOSE1kV35A110μA1kV1kV-RoHS CompliantNOT SPECIFIEDNOT SPECIFIED1000V
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