GeneSiC Semiconductor 1N3765R

Name: 1N3765R
Brand: GeneSiC Semiconductor
SKU: 2431129-1N3765R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N3765R

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2431129-1N3765R

Description:: DIODE GEN PURP REV 700V 35A DO5

ECAD Model:

Datasheet:: 1N3765R

Specifications

GeneSiC Semiconductor 1N3765R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3765R.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Base Part Number
1N3765R
JESD-30 Code
O-MUPM-D1
Operating Temperature (Max)
190°C
Number of Elements
1
Configuration
SINGLE
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard, Reverse Polarity
Current - Reverse Leakage @ Vr
10μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 35A
Case Connection
ANODE
Forward Current
35A
Operating Temperature - Junction
-65°C~190°C
Max Surge Current
475A
Application
GENERAL PURPOSE
Max Reverse Voltage (DC)
700V
Average Rectified Current
35A
Number of Phases
1
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
700V
Reverse Voltage
700V
Natural Thermal Resistance
0.25 °C/W
RoHS Status
RoHS Compliant

Description

1N3765R Overview
There is no reason to reverse the voltage at 700V.Devices like this have an average rectified current of 35A volts.There is no limit to the forward current value.Objects or materials' thermal resistance values are based on how much heat they resist when exposed to a given temperature difference, and their natural thermal resistance is 0.25 °C/W.Surge current can reach maximum value 475A.On the data sheets, the peak reverse is indicated by the data chart as 10μA.

1N3765R Features
an average rectified current of 35A volts
the peak reverse is 10μA

1N3765R Applications
There are a lot of GeneSiC Semiconductor
1N3765R applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N3765R More Descriptions

700V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 700V 35A DO5
Rectifiers 700V 35A REV Leads Std. Recovery
RECTIFIER, STANDARD, SINGLE, 400V, 165A, DO-205AA; Diode Module Configuration:Single; Forward Current If(AV):35A; Forward Voltage VF Max:1.2V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:700V

Product Comparison

The three parts on the right have similar specifications to 1N3765R.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Position

Terminal Form

Base Part Number

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

Natural Thermal Resistance

RoHS Status

Number of Pins

JESD-609 Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Element Configuration

Voltage - DC Reverse (Vr) (Max)

Forward Voltage

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Radiation Hardening

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Height

Length

Width

View Compare
1N3765R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3765R

O-MUPM-D1

190°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.2V @ 35A

ANODE

35A

-65°C~190°C

475A

GENERAL PURPOSE

700V

35A

1

10μA

700V

700V

0.25 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
VS-1N3768R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2012

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3768

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

2mA @ 1000V

1.8V @ 110A

-

35A

-65°C~190°C

400A

POWER

1kV

35A

1

2mA

1kV

1kV

0.25 °C/W

ROHS3 Compliant

2

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

Single

1000V

1.8V

400A

400A

No

-

-

-

-

-

-

1N3765R vs VS-1N3768R
VS-1N3765

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2012

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3765

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

5mA @ 700V

1.8V @ 110A

CATHODE

35A

-65°C~190°C

400A

POWER

700V

35A

1

5mA

-

700V

0.25 °C/W

ROHS3 Compliant

-

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

Single

-

-

-

-

-

NOT SPECIFIED

unknown

NOT SPECIFIED

-

-

-

1N3765R vs VS-1N3765
VS-1N3766R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2011

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N3766

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

4mA @ 800V

1.8V @ 110A

-

35A

-65°C~190°C

400A

POWER

800V

35A

1

4mA

800V

800V

0.25 °C/W

ROHS3 Compliant

2

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

Single

-

-

400A

400A

No

-

-

-

22.9mm

20.02mm

17.35mm

1N3765R vs VS-1N3766R