1N1189R

GeneSiC Semiconductor 1N1189R

Part Number:
1N1189R
Manufacturer:
GeneSiC Semiconductor
Ventron No:
3064189-1N1189R
Description:
DIODE GEN PURP REV 600V 35A DO5
ECAD Model:
Datasheet:
1N1189R

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Specifications
GeneSiC Semiconductor 1N1189R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1189R.
  • Lifecycle Status
    PRODUCTION (Last Updated: 5 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AB, DO-5, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Base Part Number
    1N1189R
  • JESD-30 Code
    O-MUPM-D1
  • Operating Temperature (Max)
    190°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    10μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 35A
  • Case Connection
    ANODE
  • Forward Current
    35A
  • Operating Temperature - Junction
    -65°C~190°C
  • Max Surge Current
    595A
  • Application
    GENERAL PURPOSE
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    500V
  • Reverse Voltage
    500V
  • Natural Thermal Resistance
    0.25 °C/W
  • RoHS Status
    RoHS Compliant
Description
1N1189R Overview
An appropriate reverse voltage is 500V.Devices with this rating have an average rectified current of 35A volts.35A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 0.25 °C/W.There can be no surge current above 595A.Using the data chart, the peak reverse is 10μA in the datasheets.

1N1189R Features
an average rectified current of 35A volts
the peak reverse is 10μA


1N1189R Applications
There are a lot of GeneSiC Semiconductor
1N1189R applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N1189R More Descriptions
600V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 600V 35A DO5
Rectifier, Standard, Single, 500V, 35A, Do-203Ab; Diode Module Configuration:single; Forward Current If(Av):35A; Forward Voltage Vf Max:1.2V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:500V
Product Comparison
The three parts on the right have similar specifications to 1N1189R.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Position
    Terminal Form
    Base Part Number
    JESD-30 Code
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Reverse Voltage
    Natural Thermal Resistance
    RoHS Status
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Forward Voltage
    Peak Non-Repetitive Surge Current
    Max Forward Surge Current (Ifsm)
    Height
    Length
    Width
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • 1N1189R
    1N1189R
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    1N1189R
    O-MUPM-D1
    190°C
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10μA @ 50V
    1.2V @ 35A
    ANODE
    35A
    -65°C~190°C
    595A
    GENERAL PURPOSE
    600V
    35A
    1
    10μA
    500V
    500V
    0.25 °C/W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N1199RA
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    -
    Bulk
    2011
    -
    Active
    1 (Unlimited)
    -
    -
    -
    1N1199
    -
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    3mA @ 50V
    1.35V @ 12A
    -
    12A
    -65°C~200°C
    240A
    -
    50V
    12A
    -
    3mA
    50V
    50V
    0.5 °C/W
    ROHS3 Compliant
    2
    DO-203AA
    200°C
    -65°C
    Single
    50V
    12A
    1.35V
    240A
    240A
    31.8mm
    12.69mm
    11mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N1183A
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    -
    Bulk
    2010
    -
    Active
    1 (Unlimited)
    -
    -
    -
    1N1183
    -
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    1.1V @ 40A
    -
    40A
    -65°C~200°C
    800A
    -
    50V
    40A
    -
    10μA
    50V
    50V
    1.25 °C/W
    RoHS Compliant
    -
    DO-203AB
    -
    -
    -
    50V
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N1183R
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2012
    -
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    1N1183
    O-MUPM-D1
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10mA @ 50V
    1.7V @ 110A
    ANODE
    35A
    -65°C~190°C
    400A
    POWER
    50V
    35A
    1
    10mA
    -
    50V
    0.25 °C/W
    ROHS3 Compliant
    2
    -
    190°C
    -65°C
    Single
    -
    -
    -
    -
    -
    -
    -
    -
    e3
    EAR99
    Tin (Sn) - with Nickel (Ni) barrier
    LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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