GeneSiC Semiconductor 1N1189R
- Part Number:
- 1N1189R
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 3064189-1N1189R
- Description:
- DIODE GEN PURP REV 600V 35A DO5
- Datasheet:
- 1N1189R
GeneSiC Semiconductor 1N1189R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1189R.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time6 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AB, DO-5, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- Base Part Number1N1189R
- JESD-30 CodeO-MUPM-D1
- Operating Temperature (Max)190°C
- Number of Elements1
- ConfigurationSINGLE
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard, Reverse Polarity
- Current - Reverse Leakage @ Vr10μA @ 50V
- Voltage - Forward (Vf) (Max) @ If1.2V @ 35A
- Case ConnectionANODE
- Forward Current35A
- Operating Temperature - Junction-65°C~190°C
- Max Surge Current595A
- ApplicationGENERAL PURPOSE
- Max Reverse Voltage (DC)600V
- Average Rectified Current35A
- Number of Phases1
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)500V
- Reverse Voltage500V
- Natural Thermal Resistance0.25 °C/W
- RoHS StatusRoHS Compliant
1N1189R Overview
An appropriate reverse voltage is 500V.Devices with this rating have an average rectified current of 35A volts.35A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 0.25 °C/W.There can be no surge current above 595A.Using the data chart, the peak reverse is 10μA in the datasheets.
1N1189R Features
an average rectified current of 35A volts
the peak reverse is 10μA
1N1189R Applications
There are a lot of GeneSiC Semiconductor
1N1189R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
An appropriate reverse voltage is 500V.Devices with this rating have an average rectified current of 35A volts.35A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 0.25 °C/W.There can be no surge current above 595A.Using the data chart, the peak reverse is 10μA in the datasheets.
1N1189R Features
an average rectified current of 35A volts
the peak reverse is 10μA
1N1189R Applications
There are a lot of GeneSiC Semiconductor
1N1189R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N1189R More Descriptions
600V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 600V 35A DO5
Rectifier, Standard, Single, 500V, 35A, Do-203Ab; Diode Module Configuration:single; Forward Current If(Av):35A; Forward Voltage Vf Max:1.2V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:500V
DIODE GEN PURP REV 600V 35A DO5
Rectifier, Standard, Single, 500V, 35A, Do-203Ab; Diode Module Configuration:single; Forward Current If(Av):35A; Forward Voltage Vf Max:1.2V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:500V
The three parts on the right have similar specifications to 1N1189R.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal PositionTerminal FormBase Part NumberJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Reverse VoltageNatural Thermal ResistanceRoHS StatusNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureElement ConfigurationVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Forward VoltagePeak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)View Compare
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1N1189RPRODUCTION (Last Updated: 5 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2010yesActive1 (Unlimited)1UPPERSOLDER LUG1N1189RO-MUPM-D1190°C1SINGLEStandard Recovery >500ns, > 200mA (Io)Standard, Reverse Polarity10μA @ 50V1.2V @ 35AANODE35A-65°C~190°C595AGENERAL PURPOSE600V35A110μA500V500V0.25 °C/WRoHS Compliant-----------------------
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-13 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, Stud-Bulk2011-Active1 (Unlimited)---1N1199----Standard Recovery >500ns, > 200mA (Io)Standard, Reverse Polarity3mA @ 50V1.35V @ 12A-12A-65°C~200°C240A-50V12A-3mA50V50V0.5 °C/WROHS3 Compliant2DO-203AA200°C-65°CSingle50V12A1.35V240A240A31.8mm12.69mm11mm---------
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, Stud-Bulk2010-Active1 (Unlimited)---1N1183----Standard Recovery >500ns, > 200mA (Io)Standard10μA @ 50V1.1V @ 40A-40A-65°C~200°C800A-50V40A-10μA50V50V1.25 °C/WRoHS Compliant-DO-203AB---50V40A---------------
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-13 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2012-Active1 (Unlimited)1UPPERSOLDER LUG1N1183O-MUPM-D1-1-Standard Recovery >500ns, > 200mA (Io)Standard, Reverse Polarity10mA @ 50V1.7V @ 110AANODE35A-65°C~190°C400APOWER50V35A110mA-50V0.25 °C/WROHS3 Compliant2-190°C-65°CSingle--------e3EAR99Tin (Sn) - with Nickel (Ni) barrierLOW LEAKAGE CURRENT8541.10.00.80Rectifier DiodesNOT SPECIFIEDunknownNOT SPECIFIED
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