GeneSiC Semiconductor 1N1189

Name: 1N1189
Brand: GeneSiC Semiconductor
SKU: 3552425-1N1189
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N1189

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 3552425-1N1189

Description:: DIODE GEN PURP 600V 35A DO5

ECAD Model:

Datasheet:: 1N1189

Specifications

GeneSiC Semiconductor 1N1189 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1189.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Supplier Device Package
DO-5
Packaging
Bulk
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
1N1189
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 35A
Forward Current
35A
Operating Temperature - Junction
-65°C~190°C
Max Surge Current
595A
Voltage - DC Reverse (Vr) (Max)
600V
Current - Average Rectified (Io)
35A
Max Reverse Voltage (DC)
600V
Average Rectified Current
35A
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
500V
Reverse Voltage
500V
Natural Thermal Resistance
0.25 °C/W
RoHS Status
RoHS Compliant

Description

1N1189 Overview
Phase diode rectifier is reasonable to reverse the voltage to 500V.This device's average rectified current is zero volts.A forward current of 35A is allowed.A thermal resistance value is how much a material or object resists a heat flow at a given temperature difference, and its natural thermal resistance is 0.25 °C/W.Surge currents are limited to 595A.The datasheets show a peak reverse of 10μA, as shown in the data chart.

1N1189 Features
an average rectified current of 35A volts
the peak reverse is 10μA

1N1189 Applications
There are a lot of GeneSiC Semiconductor
1N1189 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N1189 More Descriptions

600V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Standard Configuration)
Rectifiers 500V 35A Std. Recovery
RECTIFIER, STANDARD, SINGLE, 500V, 35A, DO-203AB; Diode Module Configuration:Single; Forward Current If(AV):35A; Forward Voltage VF Max:1.2V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:500V

Product Comparison

The three parts on the right have similar specifications to 1N1189.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Supplier Device Package

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

Natural Thermal Resistance

RoHS Status

Diode Element Material

Pbfree Code

Number of Terminations

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Case Connection

Application

Number of Phases

Number of Pins

JESD-609 Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Reach Compliance Code

Element Configuration

Forward Voltage

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Radiation Hardening

View Compare
1N1189

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

Bulk

2010

Active

1 (Unlimited)

1N1189

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.2V @ 35A

35A

-65°C~190°C

595A

600V

35A

600V

35A

10μA

500V

500V

0.25 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N1186R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

-

Bulk

2010

Active

1 (Unlimited)

1N1186R

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.2V @ 35A

35A

-65°C~190°C

595A

-

-

200V

35A

10μA

200V

200V

0.25 °C/W

RoHS Compliant

SILICON

yes

1

UPPER

SOLDER LUG

NOT SPECIFIED

NOT SPECIFIED

O-MUPM-D1

190°C

1

SINGLE

ANODE

GENERAL PURPOSE

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N1189 vs 1N1186R
VS-1N1183R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

-

Bulk

2012

Active

1 (Unlimited)

1N1183

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10mA @ 50V

1.7V @ 110A

35A

-65°C~190°C

400A

-

-

50V

35A

10mA

-

50V

0.25 °C/W

ROHS3 Compliant

SILICON

-

1

UPPER

SOLDER LUG

NOT SPECIFIED

NOT SPECIFIED

O-MUPM-D1

-

1

-

ANODE

POWER

1

2

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

unknown

Single

-

-

-

-

-

1N1189 vs VS-1N1183R
VS-1N1188

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

-

Bulk

2008

Active

1 (Unlimited)

1N1188

Standard Recovery >500ns, > 200mA (Io)

Standard

10mA @ 400V

1.7V @ 110A

35A

-65°C~190°C

400A

-

-

400V

35A

10mA

400V

400V

0.25 °C/W

ROHS3 Compliant

SILICON

-

1

UPPER

SOLDER LUG

-

-

O-MUPM-D1

-

1

-

CATHODE

POWER

1

2

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

-

Single

1.7V

400A

500A

36.9062mm

No

1N1189 vs VS-1N1188