Winbond Electronics W949D2DBJX5E
- Part Number:
- W949D2DBJX5E
- Manufacturer:
- Winbond Electronics
- Ventron No:
- 7370902-W949D2DBJX5E
- Description:
- Memory IC 13mm mm
- ECAD Model:
-
- Datasheet:
- W949D2DBJX5E
Winbond Electronics W949D2DBJX5E technical specifications, attributes, parameters and parts with similar specifications to Winbond Electronics W949D2DBJX5E.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Surface MountYES
- Operating Temperature-25°C~85°C TC
- PackagingTray
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations90
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B90
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 16M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Access Time5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization16MX32
- Memory Width32
- Write Cycle Time - Word, Page15ns
- Memory Density536870912 bit
- Length13mm
- Height Seated (Max)1.025mm
- Width8mm
- RoHS StatusROHS3 Compliant
W949D2DBJX5E Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 90-TFBGA. Memory size on the chip is 512Mb 16M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -25°C~85°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 90 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 200MHz range. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
W949D2DBJX5E Features
Package / Case: 90-TFBGA
Additional Feature:AUTO/SELF REFRESH
W949D2DBJX5E Applications
There are a lot of Winbond Electronics
W949D2DBJX5E Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 90-TFBGA. Memory size on the chip is 512Mb 16M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -25°C~85°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 90 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 200MHz range. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
W949D2DBJX5E Features
Package / Case: 90-TFBGA
Additional Feature:AUTO/SELF REFRESH
W949D2DBJX5E Applications
There are a lot of Winbond Electronics
W949D2DBJX5E Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
W949D2DBJX5E More Descriptions
R-PBGA-B90 Surface Mount Tray 16MX32 ic memory 200MHz 5ns 8mm 536870912bit
DRAM Chip Mobile LPDDR SDRAM 512Mbit 16Mx32 1.8V Automotive 90-Pin VFBGA
512Mb Low Power DDR SDRAM 166 / 200 MHz VFBGA90
IC DRAM 512MBIT PARALLEL 90VFBGA
DRAM Chip Mobile LPDDR SDRAM 512Mbit 16Mx32 1.8V Automotive 90-Pin VFBGA
512Mb Low Power DDR SDRAM 166 / 200 MHz VFBGA90
IC DRAM 512MBIT PARALLEL 90VFBGA
The three parts on the right have similar specifications to W949D2DBJX5E.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusView Compare
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W949D2DBJX5E10 WeeksSurface Mount90-TFBGAYES-25°C~85°C TCTray2016Active3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmR-PBGA-B901.95V1.7V512Mb 16M x 321VolatileSYNCHRONOUS200MHz5nsDRAMParallel16MX323215ns536870912 bit13mm1.025mm8mmROHS3 Compliant- -
10 WeeksSurface Mount60-TFBGA--25°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)--SDRAM - Mobile LPDDR1.7V~1.95V-------512Mb 32M x 16-Volatile-200MHz5nsDRAMParallel--15ns----ROHS3 Compliant
-
10 WeeksSurface Mount90-TFBGAYES-40°C~85°C TATray2016Active3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmR-PBGA-B901.95V1.7V512Mb 16M x 321VolatileSYNCHRONOUS200MHz5nsDRAMParallel16MX323215ns536870912 bit13mm1.025mm8mmROHS3 Compliant
-
10 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATray2016Active3 (168 Hours)60AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmR-PBGA-B601.95V1.7V512Mb 32M x 161VolatileSYNCHRONOUS200MHz5nsDRAMParallel32MX161615ns536870912 bit9mm1.025mm8mmROHS3 Compliant
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