Cypress Semiconductor Corp S34ML08G101TFI200
- Part Number:
- S34ML08G101TFI200
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7099275-S34ML08G101TFI200
- Description:
- Memory IC 18.4mm mm
- ECAD Model:
-
- Datasheet:
- S34ML08G1
Cypress Semiconductor Corp S34ML08G101TFI200 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S34ML08G101TFI200.
- Surface MountYES
- PackagingTray
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMatte Tin (Sn)
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)3.6V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)2.7V
- Operating ModeASYNCHRONOUS
- Organization1GX8
- Memory Width8
- Memory Density8589934592 bit
- Parallel/SerialPARALLEL
- Memory IC TypeFLASH
- Programming Voltage3V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusRoHS Compliant
S34ML08G101TFI200 Overview
In addition, memory ics is available in a Tray case as well. A total of 48 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. A programming voltage of 3V is required to change a nonvolatile memory array's state. This chip contains a FLASH type of memory IC. Use it only at temperatures above 85°C. A temperature of -40°C is required for the unit to operate, otherwise, it will not operate.
S34ML08G101TFI200 Features
This product is manufactured by Cypress Semiconductor Corp., is an essential Memory electronic component. It features a surface mount design and is coded according to JESD-609 standard as e3. Currently active, it has a high moisture sensitivity level of 3 (168 hours). The product's terminal form is GULL WING, with a terminal pitch of 0.5mm. The temperature grade is classified as industrial, ensuring optimal performance. Its minimum supply voltage stands at 2.7V, while its length measures 18.4mm and width stands at 12mm.
S34ML08G101TFI200 Applications
There are a lot of SkyHigh Memory Limited
S34ML08G101TFI200 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
In addition, memory ics is available in a Tray case as well. A total of 48 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. A programming voltage of 3V is required to change a nonvolatile memory array's state. This chip contains a FLASH type of memory IC. Use it only at temperatures above 85°C. A temperature of -40°C is required for the unit to operate, otherwise, it will not operate.
S34ML08G101TFI200 Features
This product is manufactured by Cypress Semiconductor Corp., is an essential Memory electronic component. It features a surface mount design and is coded according to JESD-609 standard as e3. Currently active, it has a high moisture sensitivity level of 3 (168 hours). The product's terminal form is GULL WING, with a terminal pitch of 0.5mm. The temperature grade is classified as industrial, ensuring optimal performance. Its minimum supply voltage stands at 2.7V, while its length measures 18.4mm and width stands at 12mm.
S34ML08G101TFI200 Applications
There are a lot of SkyHigh Memory Limited
S34ML08G101TFI200 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
S34ML08G101TFI200 More Descriptions
SLC NAND Flash Parallel 3V/3.3V 8Gbit 1G x 8bit 48-Pin TSOP-I Tray
Asynchronous Discontinued 2013 DUAL FLASH Memory -40C~85C TA 2.7V 8b 30mA
IC, FLASH MEM, 8192 MBIT, 25 NS, 48-TSOP; Memory Type:Flash - NAND; Memory Size:8192Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:48; MSL:- ;RoHS Compliant: Yes
MEMORY, FLASH, 8GBIT, 48TSOP; Memory Type:Flash - NAND; Memory Size:8Gbit; Memory Configuration:1G x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:48; Access Time:25ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
Asynchronous Discontinued 2013 DUAL FLASH Memory -40C~85C TA 2.7V 8b 30mA
IC, FLASH MEM, 8192 MBIT, 25 NS, 48-TSOP; Memory Type:Flash - NAND; Memory Size:8192Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:48; MSL:- ;RoHS Compliant: Yes
MEMORY, FLASH, 8GBIT, 48TSOP; Memory Type:Flash - NAND; Memory Size:8Gbit; Memory Configuration:1G x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:48; Access Time:25ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to S34ML08G101TFI200.
-
ImagePart NumberManufacturerSurface MountPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialMemory IC TypeProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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S34ML08G101TFI200YESTraye3Active3 (168 Hours)48Matte Tin (Sn)CMOSDUALGULL WING13V0.5mmR-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS1GX888589934592 bitPARALLELFLASH3V1.2mm18.4mm12mmRoHS Compliant--- -
YESTray-Active3 (168 Hours)63-CMOSBOTTOMBALL13.3V0.8mmR-PBGA-B63105°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS128MX881073741824 bitPARALLELFLASH3V1mm11mm9mmRoHS CompliantNOT SPECIFIEDNOT SPECIFIED
-
YESTraye3Active3 (168 Hours)48Matte Tin (Sn)CMOSDUALGULL WING13V0.5mmR-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS1GX888589934592 bitPARALLELFLASH3V1.2mm18.4mm12mmRoHS Compliant--
-
YESTray-Active3 (168 Hours)63-CMOSBOTTOMBALL13V0.8mmR-PBGA-B6385°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS1GX888589934592 bitPARALLELFLASH3V1mm11mm9mmRoHS CompliantNOT SPECIFIEDNOT SPECIFIED
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