Micron Technology Inc. MT53E256M32D2DS-046 IT:B TR
- Part Number:
- MT53E256M32D2DS-046 IT:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374378-MT53E256M32D2DS-046 IT:B TR
- Description:
- Memory IC
- ECAD Model:
-
- Datasheet:
- MT53E256M32D2DS-046 IT:B TR
Micron Technology Inc. MT53E256M32D2DS-046 IT:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-046 IT:B TR.
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-40°C~95°C
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size8Gb 256M x 32
- Memory TypeVolatile
- Clock Frequency2.133GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-046 IT:B TR Overview
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 200-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 8Gb 256M x 32. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -40°C~95°C, this device is well suited to a wide range of applications that require high performance. With 0.6V 1.1V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. In order to operate effectively, the memory rotates at a clock frequency within a range of 2.133GHz.
MT53E256M32D2DS-046 IT:B TR Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-046 IT:B TR Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-046 IT:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 200-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 8Gb 256M x 32. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -40°C~95°C, this device is well suited to a wide range of applications that require high performance. With 0.6V 1.1V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. In order to operate effectively, the memory rotates at a clock frequency within a range of 2.133GHz.
MT53E256M32D2DS-046 IT:B TR Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-046 IT:B TR Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-046 IT:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT53E256M32D2DS-046 IT:B TR More Descriptions
Active Volatile ROHS3Compliant DRAM ic memory -40C~95C 0.6V 1.1V 8Gb 256M x 32 2.133GHz
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256M X 32 1.1V 200-Pin WFBGA T/R
IC DRAM 8GBIT 2.133GHZ 200WFBGA
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256M X 32 1.1V 200-Pin WFBGA T/R
IC DRAM 8GBIT 2.133GHZ 200WFBGA
The three parts on the right have similar specifications to MT53E256M32D2DS-046 IT:B TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusFactory Lead TimeSeriesView Compare
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MT53E256M32D2DS-046 IT:B TRSurface Mount200-WFBGA-40°C~95°CTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V8Gb 256M x 32Volatile2.133GHzDRAMROHS3 Compliant--- -
Surface Mount200-VFBGA-30°C~85°C TCTape & Reel (TR)Not For New Designs3 (168 Hours)SDRAM - Mobile LPDDR41.1V24Gb 768M x 32Volatile1600MHzDRAMROHS3 Compliant--
-
Surface Mount200-WFBGA-40°C~105°C TATape & Reel (TR)Not For New Designs3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V16Gb 512M x 32Volatile1.6GHzDRAMROHS3 Compliant6 WeeksAutomotive, AEC-Q100
-
---30°C~105°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 256M x 64Volatile1600MHzDRAM-9 Weeks-
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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