Micron Technology Inc. MT41K256M4JP-125:G
- Part Number:
- MT41K256M4JP-125:G
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7375883-MT41K256M4JP-125:G
- Description:
- 78 Pin Memory IC MT41K256M4 1 Gb kb 11.5mm mm
- Datasheet:
- MT41K_256M4,128M8,64M16
Micron Technology Inc. MT41K256M4JP-125:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41K256M4JP-125:G.
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Number of Pins78
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2011
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.32
- TechnologySDRAM - DDR3
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT41K256M4
- Pin Count78
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size1Gb 256M x 4
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency800MHz
- Access Time13.75ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width4b
- Organization256MX4
- Memory Width4
- Address Bus Width17b
- Density1 Gb
- Length11.5mm
- Height Seated (Max)1.2mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT41K256M4JP-125:G Overview
Volatile is the type of memory it has. There is a Tray case available. The 78-TFBGA case contains it. The chip has an 1Gb 256M x 4 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.283V~1.45V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 78 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.35V of power. It is important to note that the memory has a clock frequency rotation within the range of 800MHz. Similar parts are frequently selected using MT41K256M4, the device's base part number. The memory device is enclosed in a package with an 78-pin connector. There are 78 pins on this memory device, which indicates it has 78 memory locations in it. A voltage of 1.35V is noted as the operating supply voltage for this memory. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip.
MT41K256M4JP-125:G Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
MT41K256M4JP-125:G Applications
There are a lot of Micron Technology Inc.
MT41K256M4JP-125:G Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Volatile is the type of memory it has. There is a Tray case available. The 78-TFBGA case contains it. The chip has an 1Gb 256M x 4 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.283V~1.45V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 78 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.35V of power. It is important to note that the memory has a clock frequency rotation within the range of 800MHz. Similar parts are frequently selected using MT41K256M4, the device's base part number. The memory device is enclosed in a package with an 78-pin connector. There are 78 pins on this memory device, which indicates it has 78 memory locations in it. A voltage of 1.35V is noted as the operating supply voltage for this memory. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip.
MT41K256M4JP-125:G Features
Package / Case: 78-TFBGA
78 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
MT41K256M4JP-125:G Applications
There are a lot of Micron Technology Inc.
MT41K256M4JP-125:G Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT41K256M4JP-125:G More Descriptions
DRAM Chip DDR3L SDRAM 1G-Bit 256Mx4 1.35V 78-Pin F-BGA
IC DDR3 SDRAM 1GBIT 800MHZ 78BGA
IC DRAM 1G PARALLEL 78FBGA
IC FLASH 128M PARALLEL 88SCSP
IC DDR3 SDRAM 1GBIT 800MHZ 78BGA
IC DRAM 1G PARALLEL 78FBGA
IC FLASH 128M PARALLEL 88SCSP
The three parts on the right have similar specifications to MT41K256M4JP-125:G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthAddress Bus WidthDensityLengthHeight Seated (Max)Radiation HardeningRoHS StatusLead FreeMountNominal Supply CurrentOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthOperating ModeJESD-30 CodeMemory DensityWidthView Compare
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MT41K256M4JP-125:GSurface Mount78-TFBGAYES780°C~95°C TCTray2011e1yesDiscontinued3 (168 Hours)78EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - DDR31.283V~1.45VBOTTOM26011.35V0.8mm30MT41K256M4781.35V1.45V1.283V1Gb 256M x 41Volatile800MHz13.75nsDRAMParallel4b256MX4417b1 Gb11.5mm1.2mmNoROHS3 CompliantLead Free-------------
-
Surface Mount78-TFBGA-780°C~95°C TCTray2012--Obsolete3 (168 Hours)78EAR99-AUTO/SELF REFRESH8542.32.00.36SDRAM - DDR31.425V~1.575VBOTTOM-11.5V0.8mm-MT41J512M4781.5V1.575V1.425V2Gb 512M x 41Volatile533MHz13.125nsDRAMParallel-512MX4418b2 Gb11.5mm1.2mmNoROHS3 CompliantLead FreeSurface Mount135mA3-STATE0.012ACOMMON819288----
-
Surface Mount78-TFBGAYES780°C~95°C TCTray2015--Obsolete3 (168 Hours)78--SELF REFRESH-SDRAM - DDR3L1.283V~1.45VBOTTOM-11.35V0.8mm-MT41K2G4-1.35V1.45V1.283V8Gb 2G x 41Volatile933MHz20nsDRAMParallel-2GX4416b8 Gb11.5mm1.2mm-ROHS3 CompliantLead Free--------SYNCHRONOUS---
-
Surface Mount78-TFBGAYES-0°C~95°C TCTray-e1-Active1 (Unlimited)78-Tin/Silver/Copper (Sn/Ag/Cu)SELF REFRESH-SDRAM - DDR3L1.283V~1.45VBOTTOM26011.35V0.8mm30---1.45V1.283V8Gb 1G x 81Volatile933MHz20nsDRAMParallel-1GX88--10.5mm1.2mm-ROHS3 Compliant---------SYNCHRONOUSR-PBGA-B788589934592 bit8mm
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