Micron Technology Inc. MT41J512M8THU-187E:A
- Part Number:
- MT41J512M8THU-187E:A
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7375288-MT41J512M8THU-187E:A
- Description:
- 82 Pin Memory IC MT41J512M8 4 Gb kb 15mm mm
- Datasheet:
- MT41J512M8THU-187E:A
Micron Technology Inc. MT41J512M8THU-187E:A technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41J512M8THU-187E:A.
- Mounting TypeSurface Mount
- Package / Case82-FBGA
- Surface MountYES
- Number of Pins82
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2002
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations82
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.36
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT41J512M8
- Pin Count82
- Operating Supply Voltage1.5V
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size4Gb 512M x 8
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency533MHz
- Supply Current-Max0.445mA
- Access Time13.125ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization512MX8
- Output Characteristics3-STATE
- Memory Width8
- Address Bus Width18b
- Density4 Gb
- Standby Current-Max0.035A
- I/O TypeCOMMON
- Refresh Cycles8192
- Length15mm
- Height Seated (Max)1.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
MT41J512M8THU-187E:A Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 82-FBGA. Memory size on the chip is 4Gb 512M x 8. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. On the chip, there are 82 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.5V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 533MHz range. It is common to select similar parts by referring to the device's base part number, MT41J512M8. An 82-pin package is used to package this memory device. A memory device like this has 82 pins, indicating that there are 82 memory locations on the device. There is a note stating that this memory chip operates at 1.5V. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.445mA , it is able to operate from a variety of supplies.
MT41J512M8THU-187E:A Features
Package / Case: 82-FBGA
82 Pins
Operating Supply Voltage:1.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41J512M8THU-187E:A Applications
There are a lot of Micron Technology Inc.
MT41J512M8THU-187E:A Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 82-FBGA. Memory size on the chip is 4Gb 512M x 8. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. On the chip, there are 82 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.5V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 533MHz range. It is common to select similar parts by referring to the device's base part number, MT41J512M8. An 82-pin package is used to package this memory device. A memory device like this has 82 pins, indicating that there are 82 memory locations on the device. There is a note stating that this memory chip operates at 1.5V. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.445mA , it is able to operate from a variety of supplies.
MT41J512M8THU-187E:A Features
Package / Case: 82-FBGA
82 Pins
Operating Supply Voltage:1.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT41J512M8THU-187E:A Applications
There are a lot of Micron Technology Inc.
MT41J512M8THU-187E:A Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT41J512M8THU-187E:A More Descriptions
IC DDR3 SDRAM 4GBIT 533MHZ 82BGA
IC FLASH 1G PARALLEL 63VFBGA
IC DRAM 4GBIT PARALLEL 533MHZ
IC FLASH 1G PARALLEL 63VFBGA
IC DRAM 4GBIT PARALLEL 533MHZ
The three parts on the right have similar specifications to MT41J512M8THU-187E:A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesLengthHeight Seated (Max)Radiation HardeningRoHS StatusMountNominal Supply CurrentSequential Burst LengthInterleaved Burst LengthLead FreeSeriesJESD-30 CodeOperating ModeMemory DensityWidthWrite Cycle Time - Word, PageView Compare
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MT41J512M8THU-187E:ASurface Mount82-FBGAYES820°C~95°C TCTray2002e1Obsolete3 (168 Hours)82EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.36SDRAM - DDR31.425V~1.575VBOTTOM26011.5V0.8mm30MT41J512M8821.5V1.575V1.425V4Gb 512M x 81Volatile533MHz0.445mA13.125nsDRAMParallel8b512MX83-STATE818b4 Gb0.035ACOMMON819215mm1.35mmNoROHS3 Compliant------------
-
Surface Mount78-TFBGA-780°C~95°C TCTray2012-Obsolete3 (168 Hours)78EAR99-AUTO/SELF REFRESH8542.32.00.36SDRAM - DDR31.425V~1.575VBOTTOM-11.5V0.8mm-MT41J512M4781.5V1.575V1.425V2Gb 512M x 41Volatile533MHz-13.125nsDRAMParallel-512MX43-STATE418b2 Gb0.012ACOMMON819211.5mm1.2mmNoROHS3 CompliantSurface Mount135mA88Lead Free------
-
Surface Mount96-TFBGAYES--40°C~125°C TCTray--Active3 (168 Hours)96EAR99-AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY8542.32.00.36SDRAM - DDR3L1.283V~1.45VBOTTOMNOT SPECIFIED11.35V0.8mmNOT SPECIFIED---1.45V1.283V4Gb 256M x 161Volatile933MHz-20nsDRAMParallel-256MX16-16-----14mm1.2mm-ROHS3 Compliant-----Automotive, AEC-Q100R-PBGA-B96SYNCHRONOUS4294967296 bit8mm-
-
Surface Mount78-TFBGA--0°C~95°C TCTray--Active3 (168 Hours)-----SDRAM - DDR3L1.283V~1.45V-----------8Gb 2G x 4-Volatile933MHz-20nsDRAMParallel------------ROHS3 Compliant-----TwinDie™----15ns
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