Micron Technology Inc. MT29RZ4B2DZZHHTB-18I.80F TR
- Part Number:
- MT29RZ4B2DZZHHTB-18I.80F TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374612-MT29RZ4B2DZZHHTB-18I.80F TR
- Description:
- Memory IC
- Datasheet:
- MT29RZ4B2DZZHHTB-18I.80F TR
Micron Technology Inc. MT29RZ4B2DZZHHTB-18I.80F TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29RZ4B2DZZHHTB-18I.80F TR.
- Factory Lead Time3 Weeks
- Mounting TypeSurface Mount
- Package / Case162-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND, DRAM - LPDDR2
- Voltage - Supply1.8V
- Memory Size4Gb 128M x 32 N 2G 64M x 32 LPDDR2
- Memory TypeNon-Volatile
- Clock Frequency533MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29RZ4B2DZZHHTB-18I.80F TR Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 162-VFBGA case contains it. The chip has an 4Gb 128M x 32 N 2G 64M x 32 LPDDR2 memory. This device uses a FLASH, RAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.8V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 533MHz.
MT29RZ4B2DZZHHTB-18I.80F TR Features
Package / Case: 162-VFBGA
MT29RZ4B2DZZHHTB-18I.80F TR Applications
There are a lot of Micron Technology Inc.
MT29RZ4B2DZZHHTB-18I.80F TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 162-VFBGA case contains it. The chip has an 4Gb 128M x 32 N 2G 64M x 32 LPDDR2 memory. This device uses a FLASH, RAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.8V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 533MHz.
MT29RZ4B2DZZHHTB-18I.80F TR Features
Package / Case: 162-VFBGA
MT29RZ4B2DZZHHTB-18I.80F TR Applications
There are a lot of Micron Technology Inc.
MT29RZ4B2DZZHHTB-18I.80F TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29RZ4B2DZZHHTB-18I.80F TR More Descriptions
Combo Memory 4G-bit x8 NAND Flash with 2Gbx32 Mobile LPDDR2 162-Pin VFBGA
Active Non-Volatile ROHS3Compliant Parallel FLASH, RAM Memory -40C~85C TA 1.8V 4Gb 128M x 32N 2G 64M x 32LPDDR2 533MHz
IC FLASH RAM 4G PARALLEL 533MHZ
Multichip Packages MASSFLASH/LPDDR2 6G
Active Non-Volatile ROHS3Compliant Parallel FLASH, RAM Memory -40C~85C TA 1.8V 4Gb 128M x 32N 2G 64M x 32LPDDR2 533MHz
IC FLASH RAM 4G PARALLEL 533MHZ
Multichip Packages MASSFLASH/LPDDR2 6G
The three parts on the right have similar specifications to MT29RZ4B2DZZHHTB-18I.80F TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29RZ4B2DZZHHTB-18I.80F TR3 WeeksSurface Mount162-VFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND, DRAM - LPDDR21.8V4Gb 128M x 32 N 2G 64M x 32 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
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16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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