Micron Technology Inc. MT29E1T08CMHBBJ4-3:B

Name: MT29E1T08CMHBBJ4-3:B
Brand: Micron Technology Inc.
SKU: 7374289-MT29E1T08CMHBBJ4-3:B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29E1T08CMHBBJ4-3:B

Manufacturer:: Micron Technology Inc.

Ventron No:: 7374289-MT29E1T08CMHBBJ4-3:B

Description:: Memory IC

ECAD Model:

Datasheet:: MT29E1T08CMHBBJ4-3:B

Specifications

Micron Technology Inc. MT29E1T08CMHBBJ4-3:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29E1T08CMHBBJ4-3:B.

Mounting Type
Surface Mount
Package / Case
132-VBGA
Operating Temperature
0°C~70°C TA
Packaging
Tray
Part Status
Not For New Designs
Technology
FLASH - NAND
Voltage - Supply
2.5V~3.6V
Memory Size
1Tb 128G x 8
Memory Type
Non-Volatile
Clock Frequency
333MHz
Memory Format
FLASH
Memory Interface
Parallel

Description

MT29E1T08CMHBBJ4-3:B Overview
There is a memory type Non-Volatile for this type of device. The case comes in the Tray style. The file is embedded in a 132-VBGA case. This chip has an 1Tb 128G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.5V~3.6V can be applied to it. There is a recommended mounting type of Surface Mount for it. During the rotation of the clock, the ic memory chip is set as 333MHz.

MT29E1T08CMHBBJ4-3:B Features
Package / Case: 132-VBGA

MT29E1T08CMHBBJ4-3:B Applications
There are a lot of Micron Technology Inc.
MT29E1T08CMHBBJ4-3:B Memory applications.

personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic

MT29E1T08CMHBBJ4-3:B More Descriptions

IC FLASH 1TBIT PARALLEL 132VBGA
IC FLASH 1T PARALLEL 333MHZ
IC DRAM 288M PARALLEL 144UBGA
L06B MLC 1T 128GX8 VBGA QDP

Product Comparison

The three parts on the right have similar specifications to MT29E1T08CMHBBJ4-3:B.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Technology

Voltage - Supply

Memory Size

Memory Type

Clock Frequency

Memory Format

Memory Interface

Series

Moisture Sensitivity Level (MSL)

RoHS Status

Factory Lead Time

Surface Mount

Number of Terminations

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Height Seated (Max)

Length

Width

View Compare
MT29E1T08CMHBBJ4-3:B

Micron Technology Inc.

Surface Mount

132-VBGA

0°C~70°C TA

Tray

Not For New Designs

FLASH - NAND

2.5V~3.6V

1Tb 128G x 8

Non-Volatile

333MHz

FLASH

Parallel

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

Surface Mount

162-VFBGA

-40°C~105°C TA

Tape & Reel (TR)

Last Time Buy

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

Automotive, AEC-Q100

3 (168 Hours)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29E1T08CMHBBJ4-3:B vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

Surface Mount

130-VFBGA

-40°C~85°C TA

Tray

Active

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

Non-Volatile

200MHz

FLASH, RAM

Parallel

-

-

RoHS Compliant

16 Weeks

YES

130

LPDRAM IS ORGANISED AS 32M X 16

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

compliant

NOT SPECIFIED

R-PBGA-B130

1.95V

1.7V

SYNCHRONOUS

128MX8

8

1073741824 bit

1mm

9mm

8mm

MT29E1T08CMHBBJ4-3:B vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

Surface Mount

162-VFBGA

-40°C~85°C TA

Tray

Last Time Buy

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

-

3 (168 Hours)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29E1T08CMHBBJ4-3:B vs MT29AZ5A3CHHWD-18AIT.84F