ISSI, Integrated Silicon Solution Inc IS66WVH8M8BLL-100B1LI-TR
- Part Number:
- IS66WVH8M8BLL-100B1LI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7373478-IS66WVH8M8BLL-100B1LI-TR
- Description:
- Memory IC 8mm mm
- Datasheet:
- IS66WVH8M8BLL-100B1LI-TR
ISSI, Integrated Silicon Solution Inc IS66WVH8M8BLL-100B1LI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS66WVH8M8BLL-100B1LI-TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case24-TBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- TechnologyPSRAM (Pseudo SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size64Mb 8M x 8
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Memory FormatPSRAM
- Memory InterfaceParallel
- Organization8MX8
- Memory Width8
- Write Cycle Time - Word, Page40ns
- Memory Density67108864 bit
- Access Time (Max)40 ns
- Length8mm
- Height Seated (Max)1.2mm
- Width6mm
- RoHS StatusROHS3 Compliant
IS66WVH8M8BLL-100B1LI-TR Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 24-TBGA. Memory size on the chip is 64Mb 8M x 8. This device uses takes advantage of the PSRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 24 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 100MHz range.
IS66WVH8M8BLL-100B1LI-TR Features
Package / Case: 24-TBGA
IS66WVH8M8BLL-100B1LI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVH8M8BLL-100B1LI-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 24-TBGA. Memory size on the chip is 64Mb 8M x 8. This device uses takes advantage of the PSRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 24 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 100MHz range.
IS66WVH8M8BLL-100B1LI-TR Features
Package / Case: 24-TBGA
IS66WVH8M8BLL-100B1LI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVH8M8BLL-100B1LI-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS66WVH8M8BLL-100B1LI-TR More Descriptions
IC PSRAM 64MBIT PARALLEL 24TFBGA
64Mb, Hyperram, 8Mbx8, 3.0V, 100Mhz, 24-Ball Tfbga, Rohs |Integrated Silicon Solution (Issi) IS66WVH8M8BLL-100B1LI-TR
SRAM 64Mb 8Mbx8 3.0V 100MHz HyperRAM
64Mb, Hyperram, 8Mbx8, 3.0V, 100Mhz, 24-Ball Tfbga, Rohs |Integrated Silicon Solution (Issi) IS66WVH8M8BLL-100B1LI-TR
SRAM 64Mb 8Mbx8 3.0V 100MHz HyperRAM
The three parts on the right have similar specifications to IS66WVH8M8BLL-100B1LI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthRoHS StatusNumber of PinsNumber of PortsAddress Bus WidthDensityView Compare
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IS66WVH8M8BLL-100B1LI-TR10 WeeksSurface Mount24-TBGAYES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)24PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V64Mb 8M x 8VolatileSYNCHRONOUS100MHzPSRAMParallel8MX8840ns67108864 bit40 ns8mm1.2mm6mmROHS3 Compliant-----
-
10 WeeksSurface Mount48-TFBGAYES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)48PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED1-0.75mmNOT SPECIFIED-3.6V2.7V64Mb 4M x 16VolatileASYNCHRONOUS-PSRAMParallel-1670ns-70 ns8mm--ROHS3 Compliant48122b64 Mb
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10 WeeksSurface Mount24-TBGAYES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)24PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V64Mb 8M x 8VolatileSYNCHRONOUS166MHzPSRAMParallel8MX8836ns67108864 bit36 ns8mm1.2mm6mmROHS3 Compliant----
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10 WeeksSurface Mount54-VFBGAYES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)54PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOM-1-0.75mm-R-PBGA-B541.95V1.7V32Mb 2M x 16VolatileASYNCHRONOUS-PSRAMParallel2MX161670ns33554432 bit70 ns8mm1mm6mmROHS3 Compliant----
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