ISSI, Integrated Silicon Solution Inc IS66WVE4M16TBLL-70BLI-TR
- Part Number:
- IS66WVE4M16TBLL-70BLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7372425-IS66WVE4M16TBLL-70BLI-TR
- Description:
- Memory IC 64 Mb kb 8mm mm
- Datasheet:
- IS66WVE4M16TBLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc IS66WVE4M16TBLL-70BLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS66WVE4M16TBLL-70BLI-TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyPSRAM (Pseudo SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size64Mb 4M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatPSRAM
- Memory InterfaceParallel
- Memory Width16
- Write Cycle Time - Word, Page70ns
- Address Bus Width22b
- Density64 Mb
- Access Time (Max)70 ns
- Length8mm
- RoHS StatusROHS3 Compliant
IS66WVE4M16TBLL-70BLI-TR Overview
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 48-TFBGA case embedded in it. 64Mb 4M x 16 is the chip's memory size. PSRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 48 terminations. In total, this part supports 1 functions. There are 48 pins on the package of the memory device. This memory chip has 1 ports for accessing one memory address via read or write.
IS66WVE4M16TBLL-70BLI-TR Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE4M16TBLL-70BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE4M16TBLL-70BLI-TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 48-TFBGA case embedded in it. 64Mb 4M x 16 is the chip's memory size. PSRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 48 terminations. In total, this part supports 1 functions. There are 48 pins on the package of the memory device. This memory chip has 1 ports for accessing one memory address via read or write.
IS66WVE4M16TBLL-70BLI-TR Features
Package / Case: 48-TFBGA
48 Pins
IS66WVE4M16TBLL-70BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE4M16TBLL-70BLI-TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS66WVE4M16TBLL-70BLI-TR More Descriptions
Active BOTTOM Volatile ASYNCHRONOUS ic memory -40C~85C TA 2.7V 64Mb 8mm
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
PSRAM Async 64M-Bit 4M x 16 70ns 48-Pin TFBGA T/R
IC PSRAM 64MBIT PARALLEL 48TFBGA
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
PSRAM Async 64M-Bit 4M x 16 70ns 48-Pin TFBGA T/R
IC PSRAM 64MBIT PARALLEL 48TFBGA
The three parts on the right have similar specifications to IS66WVE4M16TBLL-70BLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityAccess Time (Max)LengthRoHS StatusJESD-30 CodeOrganizationMemory DensityHeight Seated (Max)WidthSupply VoltageClock FrequencyView Compare
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IS66WVE4M16TBLL-70BLI-TR10 WeeksSurface Mount48-TFBGAYES48-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)48PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIED3.6V2.7V64Mb 4M x 161VolatileASYNCHRONOUSPSRAMParallel1670ns22b64 Mb70 ns8mmROHS3 Compliant--------
-
10 WeeksSurface Mount48-TFBGAYES--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)48PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIED1.95V1.7V32Mb 2M x 16-VolatileASYNCHRONOUSPSRAMParallel1670ns--70 ns8mmROHS3 CompliantR-PBGA-B482MX1633554432 bit1.2mm6mm--
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10 WeeksSurface Mount54-VFBGA---40°C~85°C TCTape & Reel (TR)Active3 (168 Hours)-PSRAM (Pseudo SRAM)1.7V~1.95V-------64Mb 4M x 16-Volatile-PSRAMParallel-70ns----ROHS3 Compliant-------
-
10 WeeksSurface Mount24-TBGAYES--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)24PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED11mmNOT SPECIFIED3.6V2.7V128Mb 16M x 8-VolatileSYNCHRONOUSPSRAMParallel840ns---8mmROHS3 CompliantR-PBGA-B2416MX8134217728 bit1.2mm6mm3V100MHz
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