ISSI, Integrated Silicon Solution Inc IS42S16160J-6TI
- Part Number:
- IS42S16160J-6TI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7101722-IS42S16160J-6TI
- Description:
- Memory IC 256 Mb kb
- Datasheet:
- IS42S16160J-6TI
ISSI, Integrated Silicon Solution Inc IS42S16160J-6TI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S16160J-6TI.
- Mounting TypeSurface Mount
- Package / Case54-TSOP (0.400, 10.16mm Width)
- Operating Temperature-40°C~85°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Operating Supply Voltage3.3V
- Memory Size256Mb 16M x 16
- Memory TypeVolatile
- Clock Frequency166MHz
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Address Bus Width13b
- Density256 Mb
- Max Frequency167MHz
- RoHS StatusROHS3 Compliant
IS42S16160J-6TI Overview
This product is manufactured by ISSI, a leading provider of integrated silicon solutions, is an essential memory electronic component. It boasts an operating temperature range of -40°C to 85°C with a TA classification, ensuring optimal performance under varying conditions. The product comes in a compact tube packaging and is currently active, boasting a moisture sensitivity level (MSL) of 3, indicating a high level of resistance against moisture intrusion. The technology employed is SDRAM, which provides reliable and efficient data storage capabilities. With a voltage supply ranging from 3V to 3.6V and an operating supply voltage of 3.3V, this product offers stability and efficiency. The memory interface is set to parallel, providing a seamless integration into various systems. It has a density of 256 Mb, ensuring ample storage capacity for your data needs. Finally, its maximum frequency reaches 167MHz, guaranteeing quick response times and smooth operation.
IS42S16160J-6TI Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
Operating Supply Voltage:3.3V
IS42S16160J-6TI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160J-6TI Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
This product is manufactured by ISSI, a leading provider of integrated silicon solutions, is an essential memory electronic component. It boasts an operating temperature range of -40°C to 85°C with a TA classification, ensuring optimal performance under varying conditions. The product comes in a compact tube packaging and is currently active, boasting a moisture sensitivity level (MSL) of 3, indicating a high level of resistance against moisture intrusion. The technology employed is SDRAM, which provides reliable and efficient data storage capabilities. With a voltage supply ranging from 3V to 3.6V and an operating supply voltage of 3.3V, this product offers stability and efficiency. The memory interface is set to parallel, providing a seamless integration into various systems. It has a density of 256 Mb, ensuring ample storage capacity for your data needs. Finally, its maximum frequency reaches 167MHz, guaranteeing quick response times and smooth operation.
IS42S16160J-6TI Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
Operating Supply Voltage:3.3V
IS42S16160J-6TI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160J-6TI Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
IS42S16160J-6TI More Descriptions
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II
IC DRAM 256MBIT PAR 54TSOP II
IC DRAM 256M PARALLEL 166MHZ
IC DRAM 256MBIT PAR 54TSOP II
IC DRAM 256M PARALLEL 166MHZ
The three parts on the right have similar specifications to IS42S16160J-6TI.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyOperating Supply VoltageMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceAddress Bus WidthDensityMax FrequencyRoHS StatusMountNumber of PinsJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsNominal Supply CurrentData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)Radiation HardeningSurface MountQualification StatusPower SuppliesOperating ModeSupply Current-MaxMemory DensityView Compare
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IS42S16160J-6TISurface Mount54-TSOP (0.400, 10.16mm Width)-40°C~85°C TATubeActive3 (168 Hours)SDRAM3V~3.6V3.3V256Mb 16M x 16Volatile166MHz5.4nsDRAMParallel13b256 Mb167MHzROHS3 Compliant---------------------------------------
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Surface Mount50-TSOP (0.400, 10.16mm Width)-40°C~85°C TATrayObsolete3 (168 Hours)SDRAM3V~3.6V3.3V16Mb 1M x 16Volatile166MHz5.5nsDRAMParallel12b16 Mb-RoHS CompliantSurface Mount50e3yes50EAR99MATTE TINAUTO/SELF REFRESH8542.32.00.02DUAL26013.3V0.8mm40503.6V3V1110mA16b1MX163-STATE160.002ACOMMON20481248FP124820.95mm1.2mmNo------
-
Surface Mount60-TFBGA-40°C~85°C TATrayObsolete3 (168 Hours)SDRAM3V~3.6V-16Mb 1M x 16Volatile166MHz5.5nsDRAMParallel---RoHS Compliant-60e1yes60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.02BOTTOM26013.3V0.65mm10603.6V3V1-16b1MX163-STATE160.004ACOMMON20481248FP124810.1mm1.2mm-YESNot Qualified3.3VSYNCHRONOUS0.17mA-
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Surface Mount90-LFBGA-40°C~85°C TATape & Reel (TR)Discontinued3 (168 Hours)SDRAM - Mobile2.3V~3V-512Mb 16M x 32Volatile133MHz5.4nsDRAMParallel---ROHS3 Compliant-90--90----BOTTOM--2.5V0.8mm------32b16MX323-STATE320.00004ACOMMON81921248FP1248---YESNot Qualified2.5V-0.25mA536870912 bit
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