ISSI, Integrated Silicon Solution Inc IS42S32800D-75EBI
- Part Number:
- IS42S32800D-75EBI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7375775-IS42S32800D-75EBI
- Description:
- 3.3V V 90 Pin Memory IC 13mm mm
- Datasheet:
- IS4xS32800D
ISSI, Integrated Silicon Solution Inc IS42S32800D-75EBI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S32800D-75EBI.
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Surface MountYES
- Number of Pins90
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations90
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.24
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count90
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size256Mb 8M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Supply Current-Max0.285mA
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization8MX32
- Memory Width32
- Standby Current-Max0.003A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Length13mm
- Height Seated (Max)1.2mm
- RoHS StatusNon-RoHS Compliant
IS42S32800D-75EBI Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 90-TFBGA case, memory ics is a single file. On the chip, there is an 256Mb 8M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 3V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 90 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3.3V will be necessary. A clock frequency rotation within 133MHz is used for the ic memory chip to rotate data. A 90-pin package containing this memory device is used to house this device. The memory device in question has 90 pins, thus indicating that it has 90 memory locations that can be accessed. This chip features all the merits of a conventional chip, but it also features AUTO/SELF REFRESH to improve system performance. 1 ports allow read/write access to one memory address in this chip. As for power supplies, this memory chip requires just 3.3V . As part of the design, the I/O port addresses are mapped into the memory using an COMMON-bit number. In order to operate your device, you will need to provide a maximum supply current of 0.285mA.
IS42S32800D-75EBI Features
Package / Case: 90-TFBGA
90 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S32800D-75EBI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S32800D-75EBI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 90-TFBGA case, memory ics is a single file. On the chip, there is an 256Mb 8M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 3V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 90 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3.3V will be necessary. A clock frequency rotation within 133MHz is used for the ic memory chip to rotate data. A 90-pin package containing this memory device is used to house this device. The memory device in question has 90 pins, thus indicating that it has 90 memory locations that can be accessed. This chip features all the merits of a conventional chip, but it also features AUTO/SELF REFRESH to improve system performance. 1 ports allow read/write access to one memory address in this chip. As for power supplies, this memory chip requires just 3.3V . As part of the design, the I/O port addresses are mapped into the memory using an COMMON-bit number. In order to operate your device, you will need to provide a maximum supply current of 0.285mA.
IS42S32800D-75EBI Features
Package / Case: 90-TFBGA
90 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S32800D-75EBI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S32800D-75EBI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
IS42S32800D-75EBI More Descriptions
DRAM Chip SDRAM 256M-Bit 8M x 32 3.3V 90-Pin TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
DRAM 256M (8Mx32) 133MHz SDRAM, 3.3v
IC DRAM 256MBIT PARALLEL 90TFBGA
DRAM 256M (8Mx32) 133MHz SDRAM, 3.3v
The three parts on the right have similar specifications to IS42S32800D-75EBI.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)RoHS StatusOutput CharacteristicsReach Compliance CodeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureFrequencyInterfaceMax Supply VoltageMin Supply VoltageMax FrequencyView Compare
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IS42S32800D-75EBISurface Mount90-TFBGAYES90-40°C~85°C TATraye0noObsolete3 (168 Hours)90EAR99Tin/Lead (Sn/Pb)AUTO/SELF REFRESH8542.32.00.24SDRAM3V~3.6VBOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIED90Not Qualified3.6V3.3V3V256Mb 8M x 321VolatileSYNCHRONOUS133MHz0.285mA5.5nsDRAMParallel32b8MX32320.003A268435456 bitCOMMON40961248FP124813mm1.2mmNon-RoHS Compliant-----------
-
Surface Mount60-TFBGAYES60-40°C~85°C TATraye1yesObsolete3 (168 Hours)60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.02SDRAM3V~3.6VBOTTOM26013.3V0.65mm1060Not Qualified3.6V3.3V3V16Mb 1M x 161VolatileSYNCHRONOUS166MHz0.17mA5.5nsDRAMParallel16b1MX16160.004A-COMMON20481248FP124810.1mm1.2mmRoHS Compliant3-STATE---------
-
Surface Mount86-TFSOP (0.400, 10.16mm Width)YES860°C~70°C TATraye0-Obsolete2 (1 Year)86EAR99Tin/Lead (Sn/Pb)AUTO/SELF REFRESH8542.32.00.24SDRAM3V~3.6VDUALNOT SPECIFIED13.3V0.5mmNOT SPECIFIED86Not Qualified3.6V3.3V3V256Mb 8M x 321VolatileSYNCHRONOUS143MHz0.27mA5.5nsDRAMParallel32b8MX32320.002A268435456 bitCOMMON40961248FP124822.22mm1.2mmNon-RoHS Compliant-not_compliant--------
-
Surface Mount90-TFBGA-900°C~70°C TATape & Reel (TR)--Obsolete2 (1 Year)-----SDRAM3V~3.6V-----------256Mb 8M x 32-Volatile-166MHz-5.5nsDRAMParallel32b----------RoHS Compliant--90-TFBGA (8x13)70°C0°C166MHzParallel3.6V3V166MHz
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