ISSI, Integrated Silicon Solution Inc IS42S16100H-6TL
- Part Number:
- IS42S16100H-6TL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7371700-IS42S16100H-6TL
- Description:
- 3.3V V Memory IC 20.95mm mm
- Datasheet:
- IS42S16100H-6TL
ISSI, Integrated Silicon Solution Inc IS42S16100H-6TL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S16100H-6TL.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case50-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations50
- ECCN CodeEAR99
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PDSO-G50
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size16Mb 1M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Supply Current-Max0.07mA
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization1MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.002A
- Memory Density16777216 bit
- I/O TypeCOMMON
- Refresh Cycles2048
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Length20.95mm
- Height Seated (Max)1.2mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
IS42S16100H-6TL Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 50-TSOP (0.400, 10.16mm Width) case. There is an 16Mb 1M x 16 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 3V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 50 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3.3V power supply. With a clock frequency of 166MHz, the memory rotates on its own. While this memory chip features many merits, it also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. This memory chip requires a mere 3.3V of power. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. This memory ics is capable of operating with an input current of 0.07mA at max.
IS42S16100H-6TL Features
Package / Case: 50-TSOP (0.400, 10.16mm Width)
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16100H-6TL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16100H-6TL Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 50-TSOP (0.400, 10.16mm Width) case. There is an 16Mb 1M x 16 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 3V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 50 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3.3V power supply. With a clock frequency of 166MHz, the memory rotates on its own. While this memory chip features many merits, it also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. This memory chip requires a mere 3.3V of power. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. This memory ics is capable of operating with an input current of 0.07mA at max.
IS42S16100H-6TL Features
Package / Case: 50-TSOP (0.400, 10.16mm Width)
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16100H-6TL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16100H-6TL Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS42S16100H-6TL More Descriptions
EAR99 Surface Mount Tray 1MX16 ic memory 166MHz 5.5ns 10.16mm 0.002A
DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 50-Pin TSOP-II
DDR SDRAM, 1Mx16, 3.3V, 2K, TSOP2-50,RoHSISSI SCT
16M, 3.3V, Sdram, 1Mx16, 166Mhz, 50 Pin Tsop Ii (400 Mil) Rohs |Integrated Silicon Solution (Issi) IS42S16100H-6TL
IC DRAM 16M PARALLEL 50TSOP II
DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 50-Pin TSOP-II
DDR SDRAM, 1Mx16, 3.3V, 2K, TSOP2-50,RoHSISSI SCT
16M, 3.3V, Sdram, 1Mx16, 166Mhz, 50 Pin Tsop Ii (400 Mil) Rohs |Integrated Silicon Solution (Issi) IS42S16100H-6TL
IC DRAM 16M PARALLEL 50TSOP II
The three parts on the right have similar specifications to IS42S16100H-6TL.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)WidthRoHS StatusNumber of PinsJESD-609 CodePbfree CodeTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountData Bus WidthMountReach Compliance CodeOperating Supply VoltageNominal Supply CurrentAddress Bus WidthDensityView Compare
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IS42S16100H-6TL6 WeeksSurface Mount50-TSOP (0.400, 10.16mm Width)YES0°C~70°C TATrayActive3 (168 Hours)50EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mmR-PDSO-G50Not Qualified3.6V3.3V3V16Mb 1M x 161VolatileSYNCHRONOUS166MHz0.07mA5.5nsDRAMParallel1MX163-STATE160.002A16777216 bitCOMMON20481248FP124820.95mm1.2mm10.16mmROHS3 Compliant----------------
-
-Surface Mount60-TFBGAYES-40°C~85°C TATrayObsolete3 (168 Hours)60EAR99AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM13.3V0.65mm-Not Qualified3.6V3.3V3V16Mb 1M x 161VolatileSYNCHRONOUS166MHz0.17mA5.5nsDRAMParallel1MX163-STATE160.004A-COMMON20481248FP124810.1mm1.2mm-RoHS Compliant60e1yesTin/Silver/Copper (Sn/Ag/Cu)8542.32.00.02260106016b------
-
-Surface Mount90-LFBGAYES-40°C~85°C TATape & Reel (TR)Discontinued3 (168 Hours)90--SDRAM - Mobile2.3V~3VBOTTOM-2.5V0.8mm-Not Qualified-2.5V-512Mb 16M x 32-Volatile-133MHz0.25mA5.4nsDRAMParallel16MX323-STATE320.00004A536870912 bitCOMMON81921248FP1248---ROHS3 Compliant90-------32b------
-
-Surface Mount86-TFSOP (0.400, 10.16mm Width)-0°C~70°C TATrayObsolete2 (1 Year)86EAR99AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.5mm-Not Qualified3.6V-3V128Mb 4M x 321VolatileSYNCHRONOUS143MHz-5.4nsDRAMParallel4MX323-STATE320.001A-COMMON40961248FP124822.22mm1.2mm-Non-RoHS Compliant86e0-Tin/Lead (Sn/Pb)8542.32.00.02NOT SPECIFIEDNOT SPECIFIED86-Surface Mountnot_compliant3.3V130mA14b128 Mb
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