Vishay Semiconductor Diodes Division G2SB80-E3/51
- Part Number:
- G2SB80-E3/51
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 8941615-G2SB80-E3/51
- Description:
- Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 50μA @ 600V 1V @ 750mA 4-Termination 1-Phase 4-SIP, GBL Bulk
- Datasheet:
- G2SB80-E3/51
Vishay Semiconductor Diodes Division G2SB80-E3/51 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division G2SB80-E3/51.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-SIP, GBL
- Number of Pins4
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishMatte Tin (Sn)
- Additional FeatureUL RECOGNIZED
- SubcategoryBridge Rectifier Diodes
- TechnologyStandard
- Pin Count4
- Number of Elements4
- Element ConfigurationSingle
- Diode TypeSingle Phase
- Current - Reverse Leakage @ Vr50μA @ 600V
- Voltage - Forward (Vf) (Max) @ If1V @ 750mA
- Case ConnectionISOLATED
- Forward Current1.5A
- Max Reverse Leakage Current5μA
- Max Surge Current80A
- Number of Phases1
- Peak Reverse Current5μA
- Max Repetitive Reverse Voltage (Vrrm)800V
- Voltage - Peak Reverse (Max)800V
- Height10.7mm
- Length20.9mm
- Width3.56mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
G2SB80-E3/51 Overview
The number of pins is 4.There is no forward voltage applied to this device.A 4-SIP, GBL package electronic component is basically a type of electronic component.The reverse leakage current must be monitored and should not exceed 0 volts.Mounting method of the device is Through Hole.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 5μA.
G2SB80-E3/51 Features
4 pin count
1.5A forward voltage
forward voltage of 1.5A
4-SIP, GBL package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA
G2SB80-E3/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
G2SB80-E3/51 applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
The number of pins is 4.There is no forward voltage applied to this device.A 4-SIP, GBL package electronic component is basically a type of electronic component.The reverse leakage current must be monitored and should not exceed 0 volts.Mounting method of the device is Through Hole.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 5μA.
G2SB80-E3/51 Features
4 pin count
1.5A forward voltage
forward voltage of 1.5A
4-SIP, GBL package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA
G2SB80-E3/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
G2SB80-E3/51 applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
G2SB80-E3/51 More Descriptions
Diode Rectifier Bridge Single 800V 1.5A 4-Pin Case GBL Bulk
DIODE GPP 1.5A 800V GBL
BRIDGE RECT 1PHASE 800V 1.5A GBL
1.5A 800V BR GBL
DIODE GPP 1.5A 800V GBL
BRIDGE RECT 1PHASE 800V 1.5A GBL
1.5A 800V BR GBL
The three parts on the right have similar specifications to G2SB80-E3/51.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyPin CountNumber of ElementsElement ConfigurationDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentMax Reverse Leakage CurrentMax Surge CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Voltage - Peak Reverse (Max)HeightLengthWidthRadiation HardeningRoHS StatusECCN CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationOutput Current-MaxCurrent - Average Rectified (Io)Non-rep Pk Forward Current-MaxBreakdown Voltage-MinView Compare
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G2SB80-E3/518 WeeksThrough HoleThrough Hole4-SIP, GBL4SILICON-55°C~150°C TJBulk2011e3yesActive1 (Unlimited)4Matte Tin (Sn)UL RECOGNIZEDBridge Rectifier DiodesStandard44SingleSingle Phase50μA @ 600V1V @ 750mAISOLATED1.5A5μA80A15μA800V800V10.7mm20.9mm3.56mmNoROHS3 Compliant-----------
-
8 WeeksThrough HoleThrough Hole4-SIP, GBL4SILICON-55°C~150°C TJTube2011e3yesActive1 (Unlimited)4Matte Tin (Sn)UL RECOGNIZEDBridge Rectifier DiodesStandard44SingleSingle Phase5μA @ 200V1V @ 750mAISOLATED1.5A5μA80A15μA600V600V10.7mm20.9mm3.56mmNoROHS3 Compliant----------
-
21 WeeksThrough HoleThrough Hole4-SIP, GBL-SILICON-55°C~150°C TJTray2017e3-Obsolete1 (Unlimited)4Matte Tin (Sn)UL RECOGNIZED-Standard-4-Single Phase5μA @ 200V1V @ 750mAISOLATED---1--200V----ROHS3 CompliantEAR99NOT SPECIFIEDunknownNOT SPECIFIEDR-PSIP-T4BRIDGE, 4 ELEMENTS1.5A1.5A60A200V
-
21 WeeksThrough HoleThrough Hole4-SIP, GBL4SILICON-55°C~150°C TJBulk2011e3yesObsolete1 (Unlimited)4Matte Tin (Sn)UL RECOGNIZEDBridge Rectifier DiodesStandard44SingleSingle Phase5μA @ 800V1V @ 750mAISOLATED1.5A5μA60A15μA800V800V10.7mm20.9mm3.56mmNoROHS3 Compliant----------
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