Infineon Technologies BGA5L1BN6E6327XTSA1

RF Low Noise Amp Single 600MHz to 1000MHz 18.5dB 6-Pin TSNP-10 T/R
LOW NOISE AMP, 18.5DB, 1GHZ, 3.6V, TSNP; Frequency Min: 600MHz; Frequency Max: 1GHz; Gain: 18.5dB; Noise Figure Typ: 0.7dB; RF IC Case Style: TSNP; No. of Pins: 6Pins; Supply Voltage Min: 1.5V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB. | Summary of Features: Operating frequencies: 600 - 1000 MHz; Insertion power gain: 18.5 dB; Insertion loss in bypass mode: 2.7 dB; Low noise figure: 0.7dB; Low current consumption: 8.2mA; Multi-state control: bypass- and high gain-mode; Ultra small TSNP-6-2 and TSNP-6-10 leadless package; RF output internally matched to 50 Ohm; Low external component count | Target Applications: LTE