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BGA5H1BN6E6327XTSA1

Infineon Technologies BGA5H1BN6E6327XTSA1

Part Number:
BGA5H1BN6E6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
7532969-BGA5H1BN6E6327XTSA1
Description:
18.1dB LTE Tape & Reel (TR) 2.3GHz~2.69GHz 1.5V~3.6V P1dB:-17dBm 0.7dB Surface Mount
ECAD Model:
Datasheet:
BGA5H1BN6E6327XTSA1

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Specifications
Infineon Technologies BGA5H1BN6E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGA5H1BN6E6327XTSA1.
  • Factory Lead Time
    16 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-XFDFN
  • Surface Mount
    YES
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Voltage - Supply
    1.5V~3.6V
  • Terminal Position
    BOTTOM
  • Terminal Form
    BUTT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.4mm
  • Frequency
    2.3GHz~2.69GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-XBCC-B6
  • Operating Temperature (Max)
    85°C
  • Operating Temperature (Min)
    -40°C
  • Temperature Grade
    INDUSTRIAL
  • Test Frequency
    2.5GHz
  • Current - Supply
    8.5mA
  • Gain
    18.1dB
  • Telecom IC Type
    TELECOM CIRCUIT
  • RF Type
    LTE
  • Noise Figure
    0.7dB
  • P1dB
    -17dBm
  • Length
    1.1mm
  • Height Seated (Max)
    0.4mm
  • Width
    0.7mm
  • RoHS Status
    ROHS3 Compliant
Description
BGA5H1BN6E6327XTSA1 Overview
LTE RF Type from the RF Amplifier.High reliability is provided by the advanced RF Amp' packaging Tape & Reel (TR).The RF power Amplifier is conveniently packaged in 6-XFDFN, making it easy to ship internationally.mount Amplifiers RF in the direction of Surface Mount.1.5V~3.6V voltage can be supplied by the Amplifiers RF.In total, the RF Amplifier has 1 function (s).8.5mA is the supply RF Amplifiers' current it uses to operate.An array of 6 terminations.

BGA5H1BN6E6327XTSA1 Features
RF Type LTE
1.5V~3.6V voltage
8.5mA current


BGA5H1BN6E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGA5H1BN6E6327XTSA1 RF Amplifiers applications.


Telematics (Asset Tracking and Management)
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
GLONASS
BGA5H1BN6E6327XTSA1 More Descriptions
RF Low Noise Amp Single 2300MHz to 2690MHz 18.1dB 6-Pin TSNP-2 T/R
Low Noise Amp, 18.1Db, 2.69Ghz, Tsnp-6; Frequency Min:2.3Ghz; Frequency Max:2.69Ghz; Gain:18.1Db; Noise Figure Typ:0.7Db; Rf Ic Case Style:Tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Rohs Compliant: Yes |Infineon BGA5H1BN6E6327XTSA1
The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB. | Summary of Features: Operating frequencies: 2300 - 2690 MHz; Insertion power gain: 18.1 dB; Insertion Loss in bypass mode: 5.2 dB; Low noise figure: 0.7 dB; Low current consumption: 8.5 mA; Multi-state control: bypass- and high gain-mode; Ultra small TSNP-6-2 and TSNP-6-10 leadless package; RF output internally matched to 50 Ohm; Low external component count | Target Applications: LTE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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