Diodes Incorporated ZXTN25050DFHTA

ZXTN25050DFHTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 260mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts can be achieved.

ZXTN25050DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 200MHz


ZXTN25050DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25050DFHTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting