ZXM61N02FTC

Diodes Incorporated ZXM61N02FTC

Part Number:
ZXM61N02FTC
Manufacturer:
Diodes Incorporated
Ventron No:
2850058-ZXM61N02FTC
Description:
MOSFET N-CH 20V 1.7A SOT23-3
ECAD Model:
Datasheet:
ZXM61N02FTC

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Specifications
Diodes Incorporated ZXM61N02FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61N02FTC.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1.7A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    806mW
  • Turn On Delay Time
    2.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 930mA, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.4nC @ 4.5V
  • Rise Time
    4.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    4.2 ns
  • Turn-Off Delay Time
    7.8 ns
  • Continuous Drain Current (ID)
    1.7A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXM61N02FTC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 160pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 4.5V) reduces this device's overall power consumption.

ZXM61N02FTC Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns


ZXM61N02FTC Applications
There are a lot of Diodes Incorporated
ZXM61N02FTC applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZXM61N02FTC More Descriptions
Trans MOSFET N-CH 20V 1.7A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 1.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. ZXM61N02FTC
MOSFET N-CHANNEL 20V 1.7A SURFACE MOUNT SOT23-3
Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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