Diodes Incorporated ZXM61N02FTC
- Part Number:
- ZXM61N02FTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2850058-ZXM61N02FTC
- Description:
- MOSFET N-CH 20V 1.7A SOT23-3
- Datasheet:
- ZXM61N02FTC
Diodes Incorporated ZXM61N02FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61N02FTC.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1.7A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation806mW
- Turn On Delay Time2.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 930mA, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds160pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs3.4nC @ 4.5V
- Rise Time4.2ns
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)4.2 ns
- Turn-Off Delay Time7.8 ns
- Continuous Drain Current (ID)1.7A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXM61N02FTC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 160pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 4.5V) reduces this device's overall power consumption.
ZXM61N02FTC Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns
ZXM61N02FTC Applications
There are a lot of Diodes Incorporated
ZXM61N02FTC applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 160pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 4.5V) reduces this device's overall power consumption.
ZXM61N02FTC Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns
ZXM61N02FTC Applications
There are a lot of Diodes Incorporated
ZXM61N02FTC applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZXM61N02FTC More Descriptions
Trans MOSFET N-CH 20V 1.7A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 1.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. ZXM61N02FTC
MOSFET N-CHANNEL 20V 1.7A SURFACE MOUNT SOT23-3
Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
Mosfet, N-Ch, 20V, 1.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. ZXM61N02FTC
MOSFET N-CHANNEL 20V 1.7A SURFACE MOUNT SOT23-3
Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
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