ZXM64N02XTA

ZETEX ZXM64N02XTA

Part Number:
ZXM64N02XTA
Manufacturer:
ZETEX
Ventron No:
5451126-ZXM64N02XTA
Description:
original in stock
ECAD Model:
Datasheet:
ZXM64N02X

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ZETEX ZXM64N02XTA technical specifications, attributes, parameters and parts with similar specifications to ZETEX ZXM64N02XTA.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Number of Pins
    8
  • Weight
    139.989945mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    40mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    5.4A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.1W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.8W
  • Turn On Delay Time
    5.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 4.5V
  • Rise Time
    9.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    9.6 ns
  • Turn-Off Delay Time
    28.3 ns
  • Continuous Drain Current (ID)
    5.4A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • Height
    950μm
  • Length
    3.1mm
  • Width
    3.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXM64N02XTA Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.3 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.

ZXM64N02XTA Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 28.3 ns


ZXM64N02XTA Applications
There are a lot of Diodes Incorporated
ZXM64N02XTA applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZXM64N02XTA More Descriptions
ZXM64N02X Series 20 V 0.04 Ohm N-Channel Enhancement Mode MOSFET -MSOP-8
Trans MOSFET N-CH 20V 5.4A Automotive 8-Pin MSOP T/R
MOSFET,N Channel, Enhancement,20V,MSOP8 | Diodes Inc ZXM64N02XTA
MOSFET Operating temperature: -55... 150 °C Housing type: MSOP-8 Polarity: N Variants: Enhancement mode Power dissipation: 1.1 W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.