VS-1N1186

Vishay Semiconductor Diodes Division VS-1N1186

Part Number:
VS-1N1186
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2423135-VS-1N1186
Description:
DIODE GEN PURP 200V 35A DO203AB
ECAD Model:
Datasheet:
VS-1N1186

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Specifications
Vishay Semiconductor Diodes Division VS-1N1186 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-1N1186.
  • Factory Lead Time
    13 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AB, DO-5, Stud
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn) - with Nickel (Ni) barrier
  • Max Operating Temperature
    190°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    LOW LEAKAGE CURRENT
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Base Part Number
    1N1186
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10mA @ 200V
  • Voltage - Forward (Vf) (Max) @ If
    1.7V @ 110A
  • Case Connection
    CATHODE
  • Forward Current
    35A
  • Operating Temperature - Junction
    -65°C~190°C
  • Max Surge Current
    400A
  • Application
    POWER
  • Forward Voltage
    1.7V
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    10mA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Peak Non-Repetitive Surge Current
    400A
  • Reverse Voltage
    200V
  • Max Forward Surge Current (Ifsm)
    500A
  • Natural Thermal Resistance
    0.25 °C/W
  • Height
    36.9062mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
VS-1N1186 Overview
Phase diode rectifier is reasonable to reverse the voltage to 200V.This device's average rectified current is zero volts.A forward current of 35A is allowed.A thermal resistance value is how much a material or object resists a heat flow at a given temperature difference, and its natural thermal resistance is 0.25 °C/W.Surge currents are limited to 400A.The datasheets show a peak reverse of 10mA, as shown in the data chart.

VS-1N1186 Features
an average rectified current of 35A volts
the peak reverse is 10mA


VS-1N1186 Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-1N1186 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
VS-1N1186 More Descriptions
Diode, Rectifier, Vr 200V, If 35A, Pkg DO-203AB (DO-5),Config Common Cathode, Vf 1.7V | Vishay PCS VS-1N1186
STANDARD DIODE, 35A, 200V, DO-203AB
DIODE GEN PURP 200V 35A DO203AB
STANDARD DIODE, 35A, 200V, DO-203AB; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):35A; Forward Voltage VF Max:1.7V; Forward Surge Current Ifsm Max:500A ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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