Microchip Technology VN2210N2
- Part Number:
- VN2210N2
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3070057-VN2210N2
- Description:
- MOSFET N-CH 100V 1.7A TO39-3
- Datasheet:
- VN2210N2
Microchip Technology VN2210N2 technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology VN2210N2.
- Factory Lead Time10 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2011
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNICKEL GOLD
- Additional FeatureHIGH INPUT IMPEDANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max360mW Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation6W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id2.4V @ 10mA
- Input Capacitance (Ciss) (Max) @ Vds500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.7A Tj
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)1.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Feedback Cap-Max (Crss)65 pF
- Height6.6mm
- Length9.4mm
- Width9.4mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
VN2210N2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
VN2210N2 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 50 ns
VN2210N2 Applications
There are a lot of Microchip Technology
VN2210N2 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
VN2210N2 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 50 ns
VN2210N2 Applications
There are a lot of Microchip Technology
VN2210N2 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
VN2210N2 More Descriptions
Mosfet, N-Channel Enhancement-Mode, 100V, 0.35 Ohm Rohs Compliant: Yes
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 0.35 Ohm3 TO-39 BAG | Microchip Technology Inc. VN2210N2
N-Channel 100 V 0.35 O Through Hole Vertical DMOS FET - TO-39-3
Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Enhancement-Mode N-Channel, 0.35Ω, 2.4V, TO-39-3, RoHSMicrochip SCT
Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 0.35 Ohm3 TO-39 BAG | Microchip Technology Inc. VN2210N2
N-Channel 100 V 0.35 O Through Hole Vertical DMOS FET - TO-39-3
Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Enhancement-Mode N-Channel, 0.35Ω, 2.4V, TO-39-3, RoHSMicrochip SCT
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