UMX1NTN

Rohm Semiconductor UMX1NTN

Part Number:
UMX1NTN
Manufacturer:
Rohm Semiconductor
Ventron No:
2460659-UMX1NTN
Description:
TRANS 2NPN 50V 0.15A 6UMT
ECAD Model:
Datasheet:
UMX1NTN

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Specifications
Rohm Semiconductor UMX1NTN technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMX1NTN.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn/Cu)
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    150mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MX1
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    180MHz
  • Transistor Type
    2 NPN (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Frequency
    100MHz
  • Transition Frequency
    180MHz
  • Collector Emitter Saturation Voltage
    400mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    120
  • Continuous Collector Current
    150mA
  • VCEsat-Max
    0.4 V
  • Height
    900μm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMX1NTN Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet UMX1NTN or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMX1NTN. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMX1NTN More Descriptions
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
ROHM UMX1NTN Dual NPN Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMX1NTN
50V 150mW 120@1mA,6V 150mA 2 NPN SOT-363-6 Bipolar Transistors - BJT ROHS
UMX1N Series 50 V 150 mA SMT Dual NPN General purpose Transistor-SC-88
Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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