UMT2NTR

Rohm Semiconductor UMT2NTR

Part Number:
UMT2NTR
Manufacturer:
Rohm Semiconductor
Ventron No:
3584799-UMT2NTR
Description:
TRANS 2PNP 50V 0.15A 6UMT
ECAD Model:
Datasheet:
UMT2NTR

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Specifications
Rohm Semiconductor UMT2NTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMT2NTR.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn/Cu)
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -150mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    MT2
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    140MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Frequency
    100MHz
  • Transition Frequency
    140MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    120
  • Continuous Collector Current
    -150mA
  • VCEsat-Max
    0.5 V
  • Height
    900μm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMT2NTR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet UMT2NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMT2NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMT2NTR More Descriptions
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
ROHM UMT2NTR Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMT2NTR
UMT2N Series 50 V 150 mA SMT Dual PNP General purpose Transistor-SC-88
TRANSISTOR DUAL UM6 PNP/PNP; Module Configuration:Dual; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:150mW; DC Collector Current:-150mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:140MHz; Hfe Min:120; Package / Case:SOT-363; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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