Rohm Semiconductor UMH14NTR
- Part Number:
- UMH14NTR
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2844706-UMH14NTR
- Description:
- TRANS 2NPN PREBIAS 0.15W UMT6
- Datasheet:
- UMH14NTR
Rohm Semiconductor UMH14NTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMH14NTR.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureDIGITAL
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MH14
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA 5V
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min100
- Resistor - Base (R1)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
UMH14NTR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMH14NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMH14NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMH14NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMH14NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMH14NTR More Descriptions
Trans Digital BJT NPN 50V 100mA 6-Pin UMT T/R
French Electronic Distributor since 1988
TRANS 2NPN PREBIAS 0.15W UMT6
OEMs, CMs ONLY (NO BROKERS)
French Electronic Distributor since 1988
TRANS 2NPN PREBIAS 0.15W UMT6
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to UMH14NTR.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinResistor - Base (R1)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Resistor - Emitter Base (R2)Power DissipationDC Current Gain-Min (hFE)Continuous Collector CurrentVCEsat-MaxREACH SVHCOperating Temperature (Max)View Compare
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UMH14NTR10 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2004e2yesNot For New Designs1 (Unlimited)6EAR99TIN COPPER150°C-55°CDIGITAL8541.21.00.75BIP General Purpose Small Signal50V150mWGULL WING260100mA10*MH1462NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA100 @ 1mA 5V300mV @ 1mA, 10mA50V250MHz50V250MHz10047k ΩNoROHS3 CompliantLead Free-------------------
-
12 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363-Cut Tape (CT)2005e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)--BUILT-IN BIAS RESISTOR RATIO IS 1-BIP General Purpose Small Signal--GULL WING260-10UMH11N62--SWITCHING2 NPN - Pre-Biased (Dual)--30 @ 5mA 5V300mV @ 500μA, 10mA-250MHz-250MHz-10k Ω-ROHS3 Compliant-YESSILICONR-PDSO-G6Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR150mWNPN500nA50V50mA0.15W10k Ω------
-
10 WeeksSurface Mount-SOT-3636Tape & Reel (TR)2004e2yesActive1 (Unlimited)6EAR99Tin/Copper (Sn/Cu)150°C-55°CBUILT IN BIAS RESISTOR RATIO 18541.21.00.75BIP General Purpose Small Signal50V150mWGULL WING26030mA10-62NPNDualSWITCHING-300mV100mA--50V250MHz50V-56-NoROHS3 CompliantLead Free------------150mW56100mA0.3 VNo SVHC-
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12 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363-Cut Tape (CT)2005e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)--BUILT-IN BIAS RESISTOR RATIO IS 1-BIP General Purpose Small Signal--GULL WING260-10UMH1N62--SWITCHING2 NPN - Pre-Biased (Dual)--56 @ 5mA 5V300mV @ 500μA, 10mA-250MHz-250MHz-22k Ω-ROHS3 Compliant-YESSILICONR-PDSO-G6Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR150mWNPN500nA50V100mA0.15W22k Ω-----150°C
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